Perovskite Flash Memory with a Single-Layer Nanofloating Gate
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
Recently, organic-inorganic halide perovskite (OHP) has been suggested as an alternative to oxides or chalcogenides in resistive switching memory devices due to low operating voltage, high ON/OFF ratio, and flexibility. The most studied OHP is 3-dimensiona ...
The functionalities and performances of today's computing systems are increasingly dependent on the memory block. This phenomenon, also referred as the Von Neumann bottleneck, is the main motivation for the research on memory technologies. Despite CMOS tec ...
The evolution of computing has lead to very different realizations to cope with performance and energy consumption density, two competing factors that are not obvious to reconcile. The current semiconductor technologies, mainly FinFETs and FDSoI, provide u ...
Antiferroelectric lead zirconate is the key ingredient in modern ferroelectric and piezoelectric functional solid solutions. By itself it offers opportunities in new-type non-volatile memory and energy storage applications. A highly useful and scientifical ...
Edge computing requires highly energy efficient microprocessor units with embedded non-volatile memories to process data at IoT sensor nodes. Ferroelectric non-volatile memory devices are fast, low power and high endurance, and could greatly enhance energy ...
Non-volatile memory (NVM) promises fast, byte-addressable and durable storage, with raw access latencies in the same order of magnitude as DRAM. But in order to take advantage of the durability of NVM, programmers need to design persistent objects which ma ...
As more and more high density memories are required to satisfy the Internet of Things ecosystem, academics and industrials are looking for an intermediate solution to fill the gap between DRAM and Flash NAND in the memory hierarchy. The emergence of Resist ...
In this paper, we consider devices, circuits, and systems comprised of transistors with integrated ferroelectrics. Said structures are actively being considered by various semiconductor manufacturers as they can address a large and unique design space. Tra ...
As more and more high density memories are required to satisfy the Internet of Things ecosystem, academics and industrials are looking for an intermediate solution to fill the gap between DRAM and Flash NAND in the memory hierarchy. The emergence of Resist ...
Non-volatile memory (NVM) promises fast, byte-addressable and durable storage, with raw access latencies in the same order of magnitude as DRAM. But in order to take advantage of the durability of NVM, programmers need to design persistent objects which ma ...
