Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures
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GaN grown by three different methods (MOVPE, GSMBE and HVPE) have been studied using temperature (T) dependent reflectivity and photoluminescence (PL). Both non intentionally doped (MOVPE, GSMBE and HVPE), n- and p-doped samples (MOVPE and GSMBE) have been ...
P doping of gallium nitride by incorporation of magnesium in the layers was controlled recently. Only Popovici et al. [1] have published the results of a Raman study on p type GaN. In the present communication, we report on the interaction of the free hole ...
In order to investigate the dramatic enhancement of the oxidation rate of semiconductor materials, promoted by an alkali-metal overlayer, we exposed a GaAs(110) surface covered by a monolayer of Cs to oxygen, observing the photoemission spectra of As 2p, G ...
We have performed low temperature (5K) photoluminescence (PL) measurements in order to study the crystalline quality of pseudomorphic modulation-doped field effect transistors (MODFET's) grown by MBE. MODFET's based on GaAs/AlGaAs with either an InGaAs or ...
We investigated the adsorption properties of methanol and ethanol on Si(111)2 x 1 as a function of temperature in the range 80-300 K by means of synchrotron radiation photoemission of core and valence levels. A physisorbed state is characterized at 80 K, w ...
On selected GaAs laser diodes, prepared by an epitaxial solution growth method, the temperature dependence of threshold current density and the net density gradient at the p-n junction have been measured. The relationship between these two parameters has b ...
Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of ma ...