Surface Analysis by Secondary Ion Mass Spectrometry (SIMS): Principles and Applications from Swiss Laboratories
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Trace contaminants in sputter atmospheres (10(-2) mbar Ar) are determined with a mass spectrometer whose ionizer is directly exposed to the process pressure, whereas the quadrupole filter is kept at high vacuum. The background limitations inherent to conve ...
The authors have produced YBaCuO thin films by mono-target ion beam sputtering. Post annealing in O2 at 850°C results in superconducting films on (100) SrTiO3 with R=0 at ~60 K. Preliminary results of chemical analysis of the films by X-ray photoelectron s ...
Quantitative Secondary Ion Mass Spectrometry (SIMS) determination of oxygen incorporation in epitaxial AlGaAs/GaAs layers is strongly affected by the presence of oxygen adsorbed on the surface. By flooding the sample with oxygen isotope O18 during the anal ...
The accumulation of oxygen at GaAs/AlGaAs interfacesgrown by molecular beam epitaxy has been established by secondary ion mass spectrometry profiling of GaAs/AlGaAs multilayerstructures. An enhanced oxygen peak was observed at the boundary between GaAs and ...
