Effect of Native Oxide on Stress in Silicon Nanowires: Implications for Nanoelectromechanical Systems
Related publications (47)
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
We study the growth of silicon nanowires (SiNWs) by chemical vapor deposition (CVD) with aluminum as catalyst. We show that for a growth temperature of 600 °C, the silicon precursor partial pressure (SiH 4 in this study) is a key parameter for controlling ...
Doped silicon nanowires (NWs) were epitaxially grown on silicon substrates by pulsed laser deposition following a vapour-liquid-solid process, in which dopants together with silicon atoms were introduced into the gas phase by laser ablation of lightly and ...
Polycrystalline materials with crystallite diameters below hundred nanometer exhibit extraordinary strength which goes along with a decrease in ductility. In order to tailor tough materials, which combine strength and ductility, the underlying deformation ...
The structure of indium-catalyzed germanium nanowires is investigated by atomic force microscopy, scanning confocal Raman spectroscopy and transmission electron microscopy. The nanowires are formed by a crystalline core and an amorphous shell. We find that ...
InAs quantum dot arrays are obtained on GaAs nanowire facets by molecular beam epitaxy. The GaAs nanowires are first grown by the gallium-assisted catalyst-free method. Decoration of the nanowire facets with InAs quantum dots is achieved only when the face ...
Multi-gate devices e.g. gate-all-around (GAA) Si nanowires and FinFETs are promising can- didates for aggressive CMOS downscaling. Optimum subthreshold slope, immunity against short channel effect and optimized power consumption are the major benefits of s ...
Aluminum-catalyzed epitaxial growth of silicon nanowire (SiNW) arrays was performed on Si wafer by chemical vapor deposition at 600°C. The arrays showed a low optical total reflectance in the visible light spectrum, with a minimum of 2% around 450nm wavele ...
Despite an evermore complete plethora of complex domain-specific semiempirical models, no succinct recipe for large-scale carbon nanotube electromechanical systems design has been formulated. To combine the benefits of these highly sensitive miniaturized m ...
AlN thin films were grown by reactive sputtering on amorphous SiO2 thin films. Film texture, x-ray rocking curve width, mechanical stress, and the clamped piezoelectric constant d33,f were studied as a function of rf bias power and substrate roughness. A h ...
Pb(Zr,Ti)O3 ceramics with homogenous, anisotropic porosity were manufactured and the influence of the anisotropic porosity on the dielectric and piezoelectric properties was studied. Image analysis allowed the quantification of the preferential orientation ...