Publication
Recent results with radiation-tolerant TowerJazz 180 nm MALTA sensors
Related concepts (31)
Active-pixel sensor
An active-pixel sensor (APS) is an , which was invented by Peter J.W. Noble in 1968, where each pixel sensor unit cell has a photodetector (typically a pinned photodiode) and one or more active transistors. In a metal–oxide–semiconductor (MOS) active-pixel sensor, MOS field-effect transistors (MOSFETs) are used as amplifiers. There are different types of APS, including the early NMOS APS and the now much more common complementary MOS (CMOS) APS, also known as the CMOS sensor.
Radiation hardening
Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation (particle radiation and high-energy electromagnetic radiation), especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.
Image sensor
An image sensor or imager is a sensor that detects and conveys information used to form an . It does so by converting the variable attenuation of light waves (as they pass through or reflect off objects) into signals, small bursts of current that convey the information. The waves can be light or other electromagnetic radiation. Image sensors are used in electronic imaging devices of both analog and digital types, which include digital cameras, camera modules, camera phones, optical mouse devices, medical imaging equipment, night vision equipment such as thermal imaging devices, radar, sonar, and others.
Pixel
In digital imaging, a pixel (abbreviated px), pel, or picture element is the smallest addressable element in a raster image, or the smallest addressable element in a dot matrix display device. In most digital display devices, pixels are the smallest element that can be manipulated through software. Each pixel is a sample of an original or synthetic image; more samples typically provide more accurate representations of the original. The intensity of each pixel is variable.
Silicon on sapphire
Silicon on sapphire (SOS) is a hetero-epitaxial process for metal–oxide–semiconductor (MOS) integrated circuit (IC) manufacturing that consists of a thin layer (typically thinner than 0.6 μm) of silicon grown on a sapphire (Al2O3) wafer. SOS is part of the silicon-on-insulator (SOI) family of CMOS (complementary MOS) technologies. Typically, high-purity artificially grown sapphire crystals are used. The silicon is usually deposited by the decomposition of silane gas (SiH4) on heated sapphire substrates.
Hybrid pixel detector
Hybrid pixel detectors are a type of ionizing radiation detector consisting of an array of diodes based on semiconductor technology and their associated electronics. The term “hybrid” stems from the fact that the two main elements from which these devices are built, the semiconductor sensor and the readout chip (also known as application-specific integrated circuit or ASIC), are manufactured independently and later electrically coupled by means of a bump-bonding process.
Ionizing radiation
Ionizing radiation (or ionising radiation), including nuclear radiation, consists of subatomic particles or electromagnetic waves that have sufficient energy to ionize atoms or molecules by detaching electrons from them. Some particles can travel up to 99% of the speed of light, and the electromagnetic waves are on the high-energy portion of the electromagnetic spectrum. Gamma rays, X-rays, and the higher energy ultraviolet part of the electromagnetic spectrum are ionizing radiation, whereas the lower energy ultraviolet, visible light, nearly all types of laser light, infrared, microwaves, and radio waves are non-ionizing radiation.
Image resolution
Image resolution is the level of detail an holds. The term applies to digital images, film images, and other types of images. "Higher resolution" means more image detail. Image resolution can be measured in various ways. Resolution quantifies how close lines can be to each other and still be visibly resolved. Resolution units can be tied to physical sizes (e.g. lines per mm, lines per inch), to the overall size of a picture (lines per picture height, also known simply as lines, TV lines, or TVL), or to angular subtense.
Semiconductor detector
A semiconductor detector in ionizing radiation detection physics is a device that uses a semiconductor (usually silicon or germanium) to measure the effect of incident charged particles or photons. Semiconductor detectors find broad application for radiation protection, gamma and X-ray spectrometry, and as particle detectors. In semiconductor detectors, ionizing radiation is measured by the number of charge carriers set free in the detector material which is arranged between two electrodes, by the radiation.
Radiation-induced cancer
Exposure to ionizing radiation is known to increase the future incidence of cancer, particularly leukemia. The mechanism by which this occurs is well understood, but quantitative models predicting the level of risk remain controversial. The most widely accepted model posits that the incidence of cancers due to ionizing radiation increases linearly with effective radiation dose at a rate of 5.5% per sievert; if correct, natural background radiation is the most hazardous source of radiation to general public health, followed by medical imaging as a close second.