Modeling the electrical characteristic of InGaN/GaN blue-violet LED structure under electrical stress
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
Since the seminal report about the first Candela-class-brightness InGaN blue light-emitting diodes (LEDs) by Shuji Nakamura et al. in 1994, III-nitride semiconductors have been one of the most important platforms for optoelectronic devices. The achieve ...
Optical nanocavities enhance light-matter interaction due to their high quality factors (Q) and small modal volumes (V). The control of light-matter interaction lies at the heart of potential applications for integrated optical circuits, including optical ...
Over the past decade, a growing interest appeared for III-nitride semiconductors, in view of their potential applications in intersubband (ISB) devices. If these materials are nowadays famous, particularly for having revolutionized domestic lighting thanks ...
For more than fifteen years, III-nitrides have become the materials of choice for the realization of optoelectronics devices operating in the visible-UV spectral range. Yet, while nitride-based technology has truly exploded, the structural quality of this ...
Inherent to the nanowire morphology is the exciting possibility of fabricating materials organized at the nanoscale in three dimensions. Composition and structure can be varied along and across the nanowire, as well as within coaxial shells. This opens up ...
This thesis aims at demonstrating a novel technique for the characterization of interfaces obtained by a CMOS-compatible Surface Activated Bonding (SAB) process between silicon wafers. This enables the optimization of the two main components of monolithic ...
Over the last two decades III-nitride optoelectronic devices have experienced an impressive evolution in terms of performance. However, their potential is far from being fully exploited. Although they offer bandgaps from the deep UV to the infrared spectra ...
Group III-nitrides have been considered a promising choice for the realization of optoelectronic devices since 1970. Since the first demonstration of the high-brightness blue light-emitting diodes (LEDs) by Shuji Nakamura and coworkers, the fabrication of ...
We report a systematic study of the photoluminescence (PL) properties of a series of nearly lattice-matched (LM) GaN/(Al,In)N single quantum well (SQW) samples, with well thickness ranging from 1.5 to 5 nm, grown by metalorganic vapor phase epitaxy. Temper ...
We experimentally prove the viability of the concept of the double-heterostructure quantum well InAlN/GaN high-electron-mobility transistor (HEMT) for the device higher robustness and reliability. In the single quantum well InAlN/GaN HEMTs, the intrinsic c ...