Indium gallium arsenideIndium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium arsenide (GaAs). Indium and gallium are group III elements of the periodic table while arsenic is a group V element. Alloys made of these chemical groups are referred to as "III-V" compounds. InGaAs has properties intermediate between those of GaAs and InAs. InGaAs is a room-temperature semiconductor with applications in electronics and photonics.
Carrier generation and recombinationIn the solid-state physics of semiconductors, carrier generation and carrier recombination are processes by which mobile charge carriers (electrons and electron holes) are created and eliminated. Carrier generation and recombination processes are fundamental to the operation of many optoelectronic semiconductor devices, such as photodiodes, light-emitting diodes and laser diodes. They are also critical to a full analysis of p-n junction devices such as bipolar junction transistors and p-n junction diodes.
Crystal structureIn crystallography, crystal structure is a description of the ordered arrangement of atoms, ions, or molecules in a crystalline material. Ordered structures occur from the intrinsic nature of the constituent particles to form symmetric patterns that repeat along the principal directions of three-dimensional space in matter. The smallest group of particles in the material that constitutes this repeating pattern is the unit cell of the structure.
Growth of photovoltaicsBetween 1992 and 2022, the worldwide usage of photovoltaics (PV) increased exponentially. During this period, it evolved from a niche market of small-scale applications to a mainstream electricity source. When solar PV systems were first recognized as a promising renewable energy technology, subsidy programs, such as feed-in tariffs, were implemented by a number of governments in order to provide economic incentives for investments. For several years, growth was mainly driven by Japan and pioneering European countries.
Molecular-beam epitaxyMolecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices, including transistors, and it is considered one of the fundamental tools for the development of nanotechnologies. MBE is used to fabricate diodes and MOSFETs (MOS field-effect transistors) at microwave frequencies, and to manufacture the lasers used to read optical discs (such as CDs and DVDs). Original ideas of MBE process were first established by K.
Gallium arsenideGallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others.
Lattice constantA lattice constant or lattice parameter is one of the physical dimensions and angles that determine the geometry of the unit cells in a crystal lattice, and is proportional to the distance between atoms in the crystal. A simple cubic crystal has only one lattice constant, the distance between atoms, but in general lattices in three dimensions have six lattice constants: the lengths a, b, and c of the three cell edges meeting at a vertex, and the angles α, β, and γ between those edges.
Solar powerSolar power is the conversion of energy from sunlight into electricity, either directly using photovoltaics (PV) or indirectly using concentrated solar power. Photovoltaic cells convert light into an electric current using the photovoltaic effect. Concentrated solar power systems use lenses or mirrors and solar tracking systems to focus a large area of sunlight to a hot spot, often to drive a steam turbine.
Grid-tie inverterA grid-tie inverter converts direct current (DC) into an alternating current (AC) suitable for injecting into an electrical power grid, normally 120 V RMS at 60 Hz or 240 V RMS at 50 Hz. Grid-tie inverters are used between local electrical power generators: solar panel, wind turbine, hydro-electric, and the grid. To inject electrical power efficiently and safely into the grid, grid-tie inverters must accurately match the voltage, frequency and phase of the grid sine wave AC waveform.
P–n junctionA p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor. The "p" (positive) side contains an excess of holes, while the "n" (negative) side contains an excess of electrons in the outer shells of the electrically neutral atoms there. This allows electric current to pass through the junction only in one direction.
