Cryogenic RF Characterization and Simple Modeling of a 22 nm FDSOI Technology

This paper presents the RF characterization and modeling of a 22nm FDSOI technology down to 3.3K for quantum computing applications. The equivalent small-signal components are extracted analytically and automatically from the de-embedded two-port Y -parameters using an iteratively re-weighted least-squares method. The dynamic self-heating effect impacting R(Y-22) is characterized at different temperatures and bias points.