Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID
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Boltzmann electron energy distribution poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Neg ...
The quickening pace of the MOSFET technology scaling has pushed the MOSFET dimension towards 10 nanometer channel length, where it is going to face the following fundamental and performance limiting factors: (i) electrostatic limits, (ii) source to drain t ...
Today's world of electronics becomes more and more digital and therefore CMOS becomes the dominant technology. A CMOS process compared to a bipolar process offers several advantages, mainly a low power consumption which is important for portable systems po ...
In this article an integrated force sensor based on a stress-sensing MOS transistor is introduced for applications in scanning force microscopy (SFM) . The sensor configuration will be described, and theoretical and experimental investigations of the sensi ...