Publications related to Electronic Coupling of Metal-to-Insulator Transitions in Nickelate-Based Heterostructures

Time-reversal symmetry breaking Abelian chiral spin liquid in Mott phases of three-component fermions on the triangular lattice

Frédéric Mila, Karlo Penc, Pierre Marcel Nataf, Miklos Lajko, Carolin Boos

We provide numerical evidence in favor of spontaneous chiral symmetry breaking and the concomitant appearance of an Abelian chiral spin liquid for three-component fermions on the triangular lattice described by an SU(3) symmetric Hubbard model with hopping ...

AMER PHYSICAL SOC2020

Unveiling the electronic transformations in the semi-metallic correlated-electron transitional oxide Mo8O23

Marco Grioni, Gianmarco Gatti

Mo8O23 is a low-dimensional chemically robust transition metal oxide coming from a prospective family of functional materials, MoO3-x, ranging from a wide gap insulator (x = 0) to a metal (x = 1). The large number of stoichometric compounds with intermedia ...

2019

Synthesis and Physical Properties of 3d, 4d and 5d Transition Metal Compounds

Lin Yang

In this thesis I study the synthesis and basic physical properties characterization on 3

d

, 4

d

and 5

d

transition metal compounds. Great success has been obtained in 3

d

transition metal compounds, in which the electric states are well localized due t ...

EPFL2017

First-principles investigation of phase stability in the Mg-Sc binary alloy

Anirudh Raju Natarajan

The recent discovery of shape memory behavior in Mg-Sc alloys has opened the door to the possibility of lightweight shape memory alloys. Very little is known, however, about martensitic phase transformations or about equilibrium phase stability in this all ...

APS2017

Spin and orbital disordering by hole doping in Pr1-xCaxVO3

Philip Pattison

High-resolution powder x-ray diffraction and single-crystal neutron diffraction were used to investigate the crystal structure and magnetic ordering of the compound Pr1-xCax VO3 (0

Amer Physical Soc2016

Investigation of the metal-insulator transition in VO2 for Electronic Switches with Sub-1mV/Decade Steep Subthreshold Slope

Mihai Adrian Ionescu, Clara-Fausta Moldovan, Josef Andreas Schuler, Wolfgang Amadeus Vitale, Antonio Paone

We report a thorough investigation of the electrically-induced metal-insulator transition in vanadium dioxide (VO2) for abrupt switching in 2-terminal devices (0.24 mV/dec at 25 °C, 0.38 mV/dec at 50 °C). We exploit the electrothermal actuation model based ...

IEEE2016

CDW and Similarity of the Mott Insulator-to-Metal Transition in Cuprates with the Gas-to-Liquid-Liquid Transition in Supercooled Water

Davide Innocenti

New advances in X-ray diffraction, extended X-ray absorption fine structure (EXAFS), and X-ray absorption near edge structure (XANES) using synchrotron radiation have now provided compelling evidence for a short-range charge density wave phase (CDW) called ...

Springer2015

Optical properties of V2O3 in its whole phase diagram

Vanadium sesquioxide V2O3 is considered a textbook example of Mott-Hubbard physics. In this paper, we present an extended optical study of its whole temperature/doping phase diagram as obtained by doping the pure material with M = Cr or Ti atoms (V1-x M-x) ...

Amer Physical Soc2015

Steep-slope Metal-Insulator-Transition VO2 Switches with Temperature-Stable High ION

Mihai Adrian Ionescu, Clara-Fausta Moldovan, Josef Andreas Schuler, Michele Tamagnone, Wolfgang Amadeus Vitale, Antonio Paone

This work reports a detailed experimental investigation of the slope of the current switching between OFF and ON states exploiting the metal-insulator-transition in vanadium dioxide devices. The reported devices are CMOS compatible 2-terminal switches. We ...

Institute of Electrical and Electronics Engineers2015

Evolution from a Nodeless Gap to d(x2-y2)-Wave in Underdoped La2-xSrxCuO4

Joël Mesot, Johan Juul Chang, Elia Razzoli

Using angle-resolved photoemission spectroscopy (ARPES), it is revealed that the low-energy electronic excitation spectra of highly underdoped superconducting and nonsuperconducting La2-xSrxCuO4 cuprates are gapped along the entire underlying Fermi surface ...

Amer Physical Soc2013

Electronic Coupling of Metal-to-Insulator Transitions in Nickelate-Based Heterostructures

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Time-reversal symmetry breaking Abelian chiral spin liquid in Mott phases of three-component fermions on the triangular lattice

Unveiling the electronic transformations in the semi-metallic correlated-electron transitional oxide Mo8O23

Synthesis and Physical Properties of 3d, 4d and 5d Transition Metal Compounds

First-principles investigation of phase stability in the Mg-Sc binary alloy

Spin and orbital disordering by hole doping in Pr1-xCaxVO3

Investigation of the metal-insulator transition in VO2 for Electronic Switches with Sub-1mV/Decade Steep Subthreshold Slope

CDW and Similarity of the Mott Insulator-to-Metal Transition in Cuprates with the Gas-to-Liquid-Liquid Transition in Supercooled Water

Optical properties of V2O3 in its whole phase diagram

Steep-slope Metal-Insulator-Transition VO2 Switches with Temperature-Stable High ION

Evolution from a Nodeless Gap to d(x2-y2)-Wave in Underdoped La2-xSrxCuO4

Time-reversal symmetry breaking Abelian chiral spin liquid in Mott phases of three-component fermions on the triangular lattice

Unveiling the electronic transformations in the semi-metallic correlated-electron transitional oxide Mo8O23

Synthesis and Physical Properties of 3d, 4d and 5d Transition Metal Compounds

Spin and orbital disordering by hole doping in Pr1-xCaxVO3

First-principles investigation of phase stability in the Mg-Sc binary alloy

Evolution from a Nodeless Gap to d(x2-y2)-Wave in Underdoped La2-xSrxCuO4

CDW and Similarity of the Mott Insulator-to-Metal Transition in Cuprates with the Gas-to-Liquid-Liquid Transition in Supercooled Water

Investigation of the metal-insulator transition in VO2 for Electronic Switches with Sub-1mV/Decade Steep Subthreshold Slope

Optical properties of V2O3 in its whole phase diagram

Steep-slope Metal-Insulator-Transition VO2 Switches with Temperature-Stable High ION