Single-photon avalanche diode fabricated in standard 55 nm bipolar-CMOS-DMOS technology with sub-20 V breakdown voltage
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The semiconductor industry, governed by the Moore's law, has achieved the almost unbelievable feat of exponentially increasing performance while lowering the costs for years. The main enabler for this achievement has been the scaling of the CMOS transistor ...
We present a complete pixel based on a single-photon avalanche diode (SPAD) fabricated in a backside-illuminated (BSI) 3D IC technology. The chip stack comprises an image sensing tier produced in a 65-nm image sensor technology and a data processing tier i ...
A variety of smart imaging and neuromorphic applications perform time-domain image acquisition in order to imitate biological systems and reduce the growing transmission bandwidth of the modern imaging devices. Because they operate in time-domain, they req ...
This paper proposes, for the first time, a compact model for avalanche noise diodes that can easily be inserted in advanced CAD tools. The model is based on the theory of the Read type microwave avalanche diodes. It fully accounts for the electronic tuning ...
In this thesis we propose the use of photodiodes fabricated in planar technologies to address the detection problem in these applications. A number of solutions exist, optimized for these wavelengths, based on Germanium (Ge) and other III-V materials. In t ...
Similar to analog silicon photomultipliers (SiPMs), digital SiPMs (dSiPMs) essentially consist of an array of single-photon avalanche photodiodes (SPADs). Instead of a passive quench resistor, however, an active quenching circuit is locally integrated with ...
In this paper, a novel CMOS single-photon avalanche diode (SPAD) is presented, and the device is designed using a vertical p-i-n diode construction. The p-i-n diode with a wide depletion region enables a low-noise operation. The proposed design achieves da ...
The Ge APD detectors are fabricated on Si by using a selective chemical-vapor deposition (CVD) epitaxial growth technique. A novel processing procedure was developed for the p+ Ge surface doping by a sequence of pure-Ga and pure-B depositions (PureGaB). Th ...
Spie-Int Soc Optical Engineering, Po Box 10, Bellingham, Wa 98227-0010 Usa2012
We present the first avalanche photodiode (APD) successfully fabricated in standard 65nm CMOS technology. The APD operates both in proportional and Geiger mode at -60C to +60C temperature range. The device comprises an octagonal n+p-well junction surrounde ...
Nanocomposite coatings composed of two phases with atomically sharp phase boundaries, show interesting mechanical properties. These properties are often originating from their high interface to volume ratio. Composites of nanocrystalline titanium nitride ( ...