Soliton Generation in a Gallium Phosphide Photonic-Crystal Fabry-Perot Microresonator
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Photoluminescence intensity and emission wavelength of InAsP/InGaAsP and InGaAs/InGaAsP multi-quantum well (MQW) laser structures grown by chemical beam epitaxy (CBE) at 460 degrees C and V/III ratio of 2 are considerably affected by annealing at temperatu ...
N-type GaAs substrates have been exposed to zinc atmospheres at 600-800 deg.C and focused light from a Kr-ion laser at 647.1 nm. Etch pits are generated at optical densities of 0.2-10 KW/cm2 and exposure times of 5-60 minutes. They are characterised by a s ...
