Publications related to X-ray qualification of hydrogenated amorphous silicon sensors on flexible substrate

Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction

Progress in light-emitting diodes (LEDs) based on ZnO/GaN heterojunctions has run into several obstacles during the last twenty years. While both the energy bandgap and lattice parameter of the two semiconductors are favorable to the development of such de ...

MDPI2020

Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice underlayer

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Mauro Mosca, Camille Haller

The electrical properties, electroluminescence (EL) power output and deep trap spectra were studied before and after 5 MeV electron irradiation of near-UV single-quantum-well (SQW) light-emitting diodes (LED) structures differing by the presence or absence ...

IOP PUBLISHING LTD2020

Amplitude analysis for the measurement of the photon polarisation in B rightarrow K pi pi gamma decays

Violaine Bellée

This work proposes a method to measure the photon polarisation in

B^+ \rightarrow K^+ \pi^- \pi^+ \gamma

decays and prepares the necessary elements for this measurement using the data sets collected by the LHCb experiment at CERN in

2011

,

2012

, $2016 ...

EPFL2020

In this dissertation, carbon is proposed as an alternative electrode material to interface with semiconducting organic-inorganic metal halide perovskites in various optoelectronic applications. Carbon electrodes may offer, good device performance, while pr ...

EPFL2019

Defect passivation in zinc tin oxide: improving the transparency-conductivity trade-off and comparing with indium-based materials

Oscar Esteban Rucavado Leandro

Transparent conductive oxides (TCOs) are essential in technologies coupling light and electricity. Due to their good optoelectronic properties and the production scalability, Sn-doped indium oxide (In2O3:Sn) is the preferred TCO in industrial applications. ...

EPFL2019

Calcium impurity as a source of non-radiative recombination in (In,Ga)N layers grown by molecular beam epitaxy

Nicolas Grandjean

Ca as an unintentional impurity has been investigated in III-nitride layers grown by molecular beam epitaxy (MBE). It is found that Ca originates from the substrate surface, even if careful cleaning and rinsing procedures are applied. The initial Ca surfac ...

Amer Inst Physics2016

Mechanical integrity of hybrid indium-free electrodes for flexible devices

Christophe Ballif, Yves Leterrier, Monica Morales Masis, Ali Dabirian, Fabien Paul Jacques Dauzou

Maintaining electrical conductivity, optical transparency, and mechanical integrity against bending and stretching are key requirements for flexible transparent electrodes. Transparent conducting oxides (TCOs) are widely used thin film electrodes in optoel ...

Elsevier2016

Over the last two decades III-nitride optoelectronic devices have experienced an impressive evolution in terms of performance. However, their potential is far from being fully exploited. Although they offer bandgaps from the deep UV to the infrared spectra ...

EPFL2015

Methylammonium Lead Iodide for Efficient X-ray Energy Conversion

László Forró, Endre Horvath, Bálint Náfrádi

We report on photocurrent generation by X-ray irradiation in methylammonium lead iodide CH3NH3PbI3 single crystals. We observed 75% of charge collection efficiency in millimeter sized samples. This efficiency is partially due to the high photon absorption ...

American Chemical Society2015

Irradiation is known to lead to degradation of mechanical properties of materials. Structural materials for nuclear applications can be affected by helium produced by transmutations. The objectives of this work were: (a) to investigate the effects of He on ...

EPFL2015

X-ray qualification of hydrogenated amorphous silicon sensors on flexible substrate

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Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction

Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice underlayer

Amplitude analysis for the measurement of the photon polarisation in B rightarrow K pi pi gamma decays

Defect passivation in zinc tin oxide: improving the transparency-conductivity trade-off and comparing with indium-based materials

Calcium impurity as a source of non-radiative recombination in (In,Ga)N layers grown by molecular beam epitaxy

Mechanical integrity of hybrid indium-free electrodes for flexible devices

Methylammonium Lead Iodide for Efficient X-ray Energy Conversion

Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction

Defect passivation in zinc tin oxide: improving the transparency-conductivity trade-off and comparing with indium-based materials

Amplitude analysis for the measurement of the photon polarisation in B rightarrow K pi pi gamma decays

Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice underlayer

Calcium impurity as a source of non-radiative recombination in (In,Ga)N layers grown by molecular beam epitaxy

Mechanical integrity of hybrid indium-free electrodes for flexible devices

Methylammonium Lead Iodide for Efficient X-ray Energy Conversion