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With the continuous shrinking of devices dimensions in microelectronic circuits, it is becoming extremely desirable to integrate analog circuitry together with complex digital logic blocks. The noise generated by the digital parts in a mixed-signal integra ...
Modern communication devices demand challenging specifications in terms of miniaturization, performance, power consumption and cost. Every new generation of radio frequency integrated circuits (RF-ICs) offer better functionality at reduced size, power cons ...
EPFL2007
As dictated by ongoing technology scaling and the advent of multi-core systems, each new generation of microprocessors and digital signal processors provides higher computing power and data throughput. However, the available bandwidth of the input/output ( ...
EPFL2006
This work was carried out in a collaborative framework between Ecole Polytechnique Fédérale de Lausanne and an industrial partner ST Microelectronics. RF MEMS passives are key devices for the RF front-end in modern transceiver and receiver architectures, o ...
Recently, artificial intelligence (AI) systems gain an increasing popularity and their development is fast. One of the most important fields of the AI system development are artificial neural networks (ANN’s) which, due to continuous progress in microelect ...
For the purpose of integrating nanomechanical structures with CMOS circuitry, nanostencil lithography ensures parallel patterning for rapid processing at wafer scale and nanometer-sized features definition. Moreover, this patterning technique is compatible ...
Wafer-scale nanostencil lithography (nSL) is used to define several types of silicon mechanical resonators, whose dimensions range from 20 μm down to 200 nm, monolithically integrated with CMOS circuits. We demonstrate the simultaneous patterning by nSL of ...
In this letter, we present a reconfigurable reflectarray cell operating at 12 GHz and fabricated in a monolithic MEMS process. A 5-bit digital control allows reconfiguration of the reflection phase over the full 360deg range, while alleviating the impact o ...
Institute of Electrical and Electronics Engineers2008
We have designed a wafer level chip scale package for a bi-stable SOI-MEMS dc switch using a silicon-glass hermetic seal with through the lid feedthroughs. Bonded at 365 °C, 230 V and 250 kg, they pass the fine/gross leak test after thermal cycling and mec ...
Vertical Hall sensors are capable of measuring surface-parallel components of the magnetic field. They allow therefore relatively easy conception of single-chip multi-axial magnetic sensors compared to solutions using horizontal Hall plates. The modern tre ...