Voltage-driven Chemical Reactions Enable the Synthesis of Tunable Liquid Ga – Metal Nanoparticles
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Gallium arsenide p-i-n radial junctions were fabricated by molecular beam epitaxy. The current-voltage characteristics of single nanowires were measured in the dark and under various illumination conditions including 1.5 AM. The total efficiency was 4.5%. ...
Gallium arsenide p-i-n radial junctions were fabricated by molecular beam epitaxy. The current-voltage characteristics of single nanowires were measured in the dark and under various illumination conditions including 1.5 AM. The total efficiency was 4.5%. ...
The properties of semiconductors heterostructures of nanoscopic dimensions change from that of bulk material according to the rules of quantum mechanics. The planar quantum wells (QWs) are widely used in various diode and laser devices thanks to the relati ...
Pure gallium and pure boron (PureGaB) Ge-on-Si photodiodes were fabricated in a CMOS compatible process and operated in linear and avalanche mode. Three different pixel geometries with very different area-to-perimeter ratios were investigated in linear arr ...
Over the last two decades III-nitride optoelectronic devices have experienced an impressive evolution in terms of performance. However, their potential is far from being fully exploited. Although they offer bandgaps from the deep UV to the infrared spectra ...
Miniaturized, low temperature Solid Oxide Fuel Cells (SOFCs) that operate below 600 °C are promising for supplying electrical power to portable devices. Thin electrolyte membranes of less than one micrometer thickness have been shown to yield reasonable po ...
Gallium nitride (GaN) is one of the most interesting materials for devices applications such as blue light emitting diodes, laser diodes and high power and high temperature electronic applications, because of its large band gap (3.39 eV). Several growth te ...
The effect of the miscut angle of vicinal substrate on the optical and morphological properties of GaAs/AlxGa1-xAs quantum wells grown by metalorganic vapor phase epitaxy is studied by means of photoluminescence (PL) and atomic force microscopy. Within sma ...
For more than fifteen years, III-nitrides have become the materials of choice for the realization of optoelectronics devices operating in the visible-UV spectral range. Yet, while nitride-based technology has truly exploded, the structural quality of this ...
A study of the GaN nanocolumns nucleation and growth by molecular beam epitaxy on Si(111) is presented. Ga droplets with different diameters (340-90 nm) were deposited on the substrate. prior to growth, to determine any effect on the nanocolumns size and d ...