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Identification and thermal healing of focused ion beam-induced defects in GaN using off-axis electron holography

Related publications (32)

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Band alignments and defect levels in Si-HfO2 gate stacks: Oxygen vacancy and Fermi-level pinning

Alfredo Pasquarello, Peter Broqvist, Audrius Alkauskas

The determination of band alignments and defect levels is demonstrated for the technologically relevant Si-SiO2-HfO2 gate stack. The proposed scheme, which combines first-principles molecular dynamics for model generation and hybrid density functionals for ...

2008

Effect of anodic oxidation on the characteristics of lattice-matched AlInN/GaN heterostructures

Nicolas Grandjean, Jean-François Carlin, Eric Feltin

The effect of anodic oxidation on the electronic characteristics of lattice-matched AlInN/GaN heterostructures was investigated using field-effect transistor (FET) structures with the gate areas in direct contact with the electrolytes. The gate surface of ...

2008

We study the interfacial electronic properties of a model Si-SiO2-Si structure which is intended to simulate the substrate-oxide-polysilicon stack in metal-oxide-semiconductor devices. The structural properties of this model are shown to match closely thos ...

2004

We present a theoretical study of the physical characteristics of metal/semiconductor junctions. Using first principle pseudopotential calculations, we have investigated the nature of electronic states with energies within the semiconductor band gap of rep ...

EPFL2003

The electrical behavior of Au/SiOx/n-GaAs Schottky structures has been studied using a statistical approach. II has been concluded that the obtained unusual electrical behavior is connected mainly with different Fermi-level pinning position and lateral mic ...

1998

A study of the formation of In- and Au-GaAs(100) interfaces is reported. The metal overlayers are deposited in ultrahigh vacuum on room-temperature (RT) and low-temperature (LT) (100)GaAs grown by molecular-beam epitaxy, following the evaporation of a prot ...

1992

We applied the internal photoemission technique to the direct observation of deep levels together with barrier heights and band discontinuities at different semiconductor heterostructure interfaces. Its performances and capabilities are superior to those o ...

1992

Schottky-barrier formation for Al on GaAs(110) was analyzed theoretically and with the aid of synchrotron-radiation photoemission experiments as a function of the metal coverage. For various Al-overlayer thicknesses we calculated the most stable geometries ...

1992

We use the Kelvin method to study the synchrotron radiation induced surface photovoltage (SPV) on GaAs(110) as a function of metal coverage and temperature. We find that varying the temperature alone does not induce significant change in band bending in th ...

1991

We studied the Bi/InP(110) interface for 0.35- and 0.9-monolayer (ML) Bi coverages by photoemission extended x-ray absorption fine-structure (PEXAFS). P 2p PEXAFS data were acquired. The data were analyzed by Fourier filtering followed by phase analysis us ...

1991