Are you an EPFL student looking for a semester project?
Work with us on data science and visualisation projects, and deploy your project as an app on top of Graph Search.
In this study, we place a strong emphasis on understanding the ultrafast dynamics of carrier recombination pathways in p-type ZnO, especially in the midgap region. Synthesizing and controlling the properties of p-type ZnO remains a pivotal yet challenging task for numerous optoelectronic and spintronic applications due to intrinsic midgap (defect) states. Through an advanced sol-gel process, we have successfully produced ZnO quantum dots (QD), eliminating unreacted molecules that decrease the excitonic emission. This refined method supports the generation of ZnO with p-type characteristics, primarily attributed to zinc vacancies in oxygen-rich scenarios. Notably, our analysis across timescales from femtoseconds to microseconds unveiled carrier lifetimes at room temperature, and associated long-lasting carriers with zinc vacancy defects, corroborating the p-type nature of our synthesized ZnO QDs.
Jacques-Edouard Moser, Andrea Cannizzo, Etienne Christophe Socie, Camila Bacellar Cases Da Silveira, Victoria Kabanova
Elias Zsolt Stutz, Jean-Baptiste Leran, Mahdi Zamani, Simon Robert Escobar Steinvall, Rajrupa Paul, Mirjana Dimitrievska, Léa Buswell