Films minces relaxeur-ferroélectriques à base de Pb(Mg1/3NB2/3)O3
Related publications (217)
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
Pyrochlore free Pb(Mg1/3Nb2/3)O-3 (PMN) thin films were prepared from alkoxide-based solution precursors. The influence of different seeding layers and chemical solution on the microstructures is shown. Dielectric, electrostrictive, and piezoelectric prope ...
The printing of lead zirconate titanate (PZT, Pb(Zr,Ti)O-3) piezoelectric thick films on silicon substrates is being studied for potential use as microactuators, microsensors, and micro.. transducers. A fundamental challenge in the fabrication of useful PZ ...
The (1-x)Pb(Sc1/2Nb1/2)O-3-xPbTiO(3)(x=0.4, PSNT(60/40)) thin films near the morphotropic phase boundary(MPB) composition were successfully deposited via sol-gel method. Taking the strict controls of processing factors such as the stable and homogeneous pr ...
Pyrochlore free 0.9Pb(Mg1/3Nb2/3)O-3-0.1PbTiO(3) thin films were prepared from alkoxide-based solution precursors. Preferential (111) crystallographic orientation was obtained on TiO2/Pt/TiO2/SiO2/Si substrates by spin coating. Dielectric, electrostrictive ...
Pb(Zr,Ti)O-3 (PZT) and Pb(Zr,Ti,Nb)O-3 (PNZT) thin films were grown on platinized silicon substrates by r.f. magnetron sputtering followed by a post-annealing treatment. The Niobium, Nb, concentration varied from 1 to 7 at.% by increment of 1 at.%. The eff ...
We investigate structural, electronic, dynamical, and dielectric properties of zircon (ZrSiO4) within density-functional theory. The atomic structure is fully relaxed and the structural parameters are found to differ by less than 1.5% from the experimental ...
Strontium Bismuth Titanate is a very promising material for high temperature piezoelectric applications, its elevated ferroelectric phase transition (530°C), linear piezoelectric properties under low field and relatively low room temperature conductivity ( ...
A strong de electric field dependence of the dielectric permittivity makes perovskite ferroelectrics promising materials for tunable microwave devices like phase shifters, tunable resonators, tunable filters etc. Dielectric loss is a crucial parameter for ...
Using the variational density-functional perturbation theory, we investigate the dynamical and dielectric properties of tetragonal zirconia (t-ZrO2). We obtain the phonon frequencies at the center of the Brillouin zone, the Born effective charge tensors, a ...
Electromechanical properties of a number of ferroelectric films including PbZrxTi1-xO3(PZT), 0.9PbMg(1/3)Nb(2/3)O(3)-0.1PbTiO(3)(PMN-PT), and SrBi2Ta2O9(SBT) are investigated using laser interferometry combined with conventional dielectric measurements. Ef ...