Films minces relaxeur-ferroélectriques à base de Pb(Mg1/3NB2/3)O3
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
Pb(Zr, Ti)O-3 (PZT) and Pb(Zr, Ti, Nb)O-3 (PNZT) thin films have been deposited on platinized silicon substrates by sputtering followed by a postannealing treatment. The Nb concentration in the films varied between 1 and 7 at. % with increments of 1 at. %. ...
The effect of 1 MeV ion implantation on leakage conduction, dielectric and ferroelectric properties of the Pt/Pb(ZrxTi1-x)(2)O-3/Pt capacitors is studied for a wide range of implantation doses (10(10)-10(16) cm(-2)). It is shown that the implantation of Pt ...
The non-linear dielectric properties of single crystals of PbMg1/3Nb2/3O3 relaxer ferroelectric were investigated experimentally by using measurements of the dielectric permittivity of this material as a function of the DC bias and the AC driving fields. T ...
Selective modification of zirconium alkoxide by acetic acid or acetylacetone was used in solution processing of PZT Pb(Zr,Ti)O-3 thin films by 2-methoxyethanol route. EXAFS results clearly show a decrease of Zr-O-Zr links in the acetic acid modified PZT so ...
A study of the complex permittivity in bismuth titanate was conducted to reveal the nature of an anomaly in the real part of the permittivity, which occurs below the Curie temperature. This anomaly is frequency dependent and is caused by a combination of t ...
A phenomenological model was proposed which describes frequency dispersion of nonlinear dielectric response of relaxer ferroelectrics (relaxors) as a result of dispersion of their linens dielectric permittivity. The model was applied to Pb(Mg1/3Nb2/3)O-3 ( ...
The evolution of switching polarization (P-r(s)) suppression, in Pb(Zr,Ti)O-3 films, induced by two different electric treatments is addressed in terms of the nonlinear dielectric response. The ac electric field dependence of dielectric permittivity was co ...
Pb(Mg1/3Nb2/3)O-3 thin films were prepared from modified alkoxide solution precursors and their dielectric and electromechanical characteristics were investigated. Preparation of the films is very sensitive to processing parameters. The influence of differ ...
The dielectric and piezoelectric response of ferroelectric thin films and ceramics was investigated as a function of the driving field amplitude. Detailed analysis of the amplitude and phase angle of the third harmonic of the dielectric displacement and pi ...
Having a composition closed to the morphotropic phase boundary, PZT films of 14 mu m thickness with a porosity less than 7% were prepared by the double print double firing method. At room temperature the dielectric constant, remanent polarization and coerc ...
