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Patterned and self-assembled ferroelectric nano-structures obtained by epitaxial growth and e-beam lithography

Related publications (311)

Dielectric Actuation Techniques at the Nanoscale: Piezoelectricity and Flexoelectricity

Micro- and nanoelectromechanical systems (MEMS/NEMS) have long shown their potential to disrupt the established technologies. Over the past 15 years, MEMS have become fundamental components in filters, accelerometers, gyroscopes and gas sensors. MEMS are n ...

EPFL2019

Material Parameter Extraction for Complex AlScN Thin Film Using Dual Mode Resonators in Combination with Advanced Microstructural Analysis and Finite Element Modeling

Paul Muralt, Silviu Cosmin Sandu, Mohammad Fazel Parsapour Kolour, Vladimir Pashchenko, Kaoru Yamashita

Accurate property determination of the piezoelectric thin film material Al(1-x)Sc(x)N is necessary for designing the next generation of radio frequency resonators in mobile communication, and for testing results of ab initio calculations. Sound velocity an ...

WILEY2019

Growth, Integration, and Functional Characterization of AlScN Thin Films for RF MEMS Devices

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Mobile communication has grown explosively in recent years, leading to a strong demand for cheap, but high-performing bandpass filters with low insertion loss and smaller size. Surface acoustic wave (SAW) and thin film bulk acoustic wave (BAW) resonators r ...

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Ferroelectric materials are used in actuators or sensors because of their non-volatile macroscopic electric polarization. GeTe is the simplest known diatomic ferroelectric endowed with exceedingly complex physics related to its crystalline, amorphous, ther ...

2019

Origin of Ferroelectric Phase in Undoped HfO2 Films Deposited by Sputtering

Igor Stolichnov, Matteo Cavalieri

Thin film metal-insulator-metal capacitors with undoped HfO2 as the insulator are fabricated by sputtering from ceramic targets and subsequently annealed. The influence of film thickness and annealing temperature is characterized by electrical and structur ...

WILEY2019

Large impact of strain on the electro-optic effect in (Ba, Sr)TiO3 thin films: Experiment and theoretical comparison

Alexander Tagantsev

(001)-epitaxial (Ba0.5Sr0.5)TiO3 (BST) thin films with different magnitudes of compressive strain were fabricated on SrRuO3/SrTiO3 substrates by pulsed laser deposition, and their electro-optic (EO) properties were characterized by modulation ellipsometry ...

AMER INST PHYSICS2019

Transient Negative Capacitance of Silicon-doped HfO2 in MFMIS and MFIS structures: experimental insights for hysteresis-free steep slope NC FETs

Mihai Adrian Ionescu, Paul Muralt, Igor Stolichnov, Ali Saeidi, Matteo Cavalieri, Carlotta Gastaldi

In this paper, we experimentally explore the transient negative capacitance effect in ferroelectric high-k gate stacks using multi-ferroelectric domain Si-doped HfO2 with and without the metal plane, MFMIS (TiN/Si:HfO2/TiN/SiO2) and MFIS (TiN/Si:HfO2/SiO2) ...

IEEE2019

The influence of compressive strain on the linear electro-optic (EO) effect in c-domain (BaxSr1-x)TiO3 (BST) thin films was theoretically investigated using a phenomenological thermodynamic model. We considered that the c-domain BST thin films were grown o ...

CERAMIC SOC JAPAN-NIPPON SERAMIKKUSU KYOKAI2019

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The new class of fully silicon-compatible hafnia-based ferroelectrics with high switchable polarization and good endurance and thickness scalability shows a strong promise for new generations of logic and memory devices. Among other factors, their competit ...

2018

Long-range symmetry breaking in embedded ferroelectrics

Dragan Damjanovic

The characteristic functionality of ferroelectric materials is due to the symmetry of their crystalline structure. As such, ferroelectrics lend themselves to design approaches that manipulate this structural symmetry by introducing extrinsic strain. Using ...

2018

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