Publications related to Suppression of the quantum-confined Stark effect in polar nitride heterostructuresis

Interaction between site-controlled quantum dot systems and photonic cavity structures

The goal of this thesis was to investigate light-matter interaction in nanophotonic devices based on site-controlled pyramidal quantum dots (QD) in photonic crystal (PhC) cavities. These QDs provide position and spectral control, which is hardly achievable ...

EPFL2017

Nanometer-scale monitoring of quantum-confined Stark effect and emission efficiency droop in multiple GaN/AlN quantum disks in nanowires

Gwénolé Jean Jacopin

We report on a detailed study of the intensity dependent optical properties of individual GaN/AlN quantum disks (QDisks) embedded into GaN nanowires (NW). The structural and optical properties of the QDisks were probed by high spatial resolution cathodolum ...

Amer Physical Soc2016

M-Plane GaN/InAlN Multiple Quantum Wells in Core-Shell Wire Structure for UV Emission

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Georg Rossbach

We report on the epitaxial growth of high-quality core-shell nonpolar m-plane GaN/InAlN multiple quantum wells (MQWs) on the sidewall facets of c-oriented hexagonal GaN wires. Pseudomorphic growth without generation of threading dislocations has been estab ...

Amer Chemical Soc2014

Optical bistability in InGaN-based multisection laser diodes

Nicolas Grandjean, Jean-François Carlin, Julien Dorsaz, Dmitri Boiko, Luca Alex Milo Sulmoni

Optical bistability is observed in cw-operating InGaN-based laser diodes including a saturable absorber (SA) section. The dependence of the light-current hysteresis on the SA section length and reverse bias (VSA) has been studied. An analytical approach is ...

AIP American Institute of Physics2011

Time-resolved cathodoluminescence on polychromatic light emitting (In,Ga)N quantum wells grown on (11-22) GaN facets

Jean-François Carlin, Nicolas Grandjean, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Eric Feltin, Pierre Michel Corfdir, Dobri Simeonov

We present a low-temperature time-resolved cathodoluminescence study on (In,Ga)N/GaN quantum wells grown on the (11-22) facets of non-coalesced ELO-GaN. Taking advantage of the quantum confined Stark effect, such structures have been proposed as promising ...

V C H Publishers, Suite 909, 220 E 23Rd St, New York, Ny 10010 Usa2011

Dynamic switching of hole character and single photon polarization using the quantum confined Stark effect in quantum dot-in-dot structures

Elyahou Kapon, Valentina Troncale

The engineering of the three-dimensional (3D) heterostructure potential in GaAs/AlGaAs pyramidal quantum dot-in-dots (DiDs) provides control over the valence band symmetry and hence on the polarization of the emitted photons. We propose a technique for dyn ...

Institute of Physics2010

Synthesis and optical investigation of single polar GaN/AlN quantum dots

Dobri Simeonov

Over the past few decades, III-V nitrides have attracted much attention due to the possibility to realize high efficiency optoelectronic devices covering all the UV and visible part of the light spectrum. However, the device fabrication has gone much faste ...

EPFL2009

Different pressure behavior of GaN/AlGaN quantum structures grown along polar and nonpolar crystallographic directions

Nicolas Grandjean

High quality GaN/AlGaN multiquantum well (QW) structures were grown by ammonia molecular beam epitaxy along the (0001) polar and (11 (2) over bar0) nonpolar directions. Each sample contains three QWs with thicknesses of 2, 3, and 4 nm as well as 10 nm Al0. ...

2009

Impact of quantum confinement and quantum confined Stark effect on biexciton binding energy in GaN/AlGaN quantum wells

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Jacques Levrat, Eric Feltin, Dobri Simeonov, Massimo Gurioli

We report on time-resolved photoluminescence measurements carried out along the thickness gradient of two types of GaN/AlGaN quantum wells with low Al content in the barriers (5% and 9%, respectively). A reduction of the biexciton binding energy with incre ...

2008