Single-chip electron spin resonance detectors operating at 50 GHz, 92 GHz, and 146 GHz

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Non-contact sensing for anomaly detection in wind turbine blades: A focus-SVDD with complex-valued auto-encoder approach

The occurrence of manufacturing defects in wind turbine blade (WTB) production can result in significant increases in operation and maintenance costs of WTBs, reduce capacity factors of wind farms, and occasionally lead to severe and disastrous consequence ...

2024

A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs

Drazen Dujic

Dual-channel gate driver is commonly utilized in the industry for accommodating the widespread use of half-bridge power modules. As wide-bandgap devices become increasingly prevalent due to their superior switching characteristics compared with conventiona ...

2024

Static and Dynamic Voltage Balancing for an IGCT-Based Resonant DC Transformer

Drazen Dujic, Renan Pillon Barcelos, Nikolina Djekanovic

This paper focuses on the operational characteristics of a medium voltage resonant DC transformer based on a split capacitor IGCT 3L-NPC leg. The study delves into both the dynamic and static balancing aspects of the 3L-NPC when operating in a two-level, 5 ...

2024

Anomalous‐Chern Steering of Topological Nonreciprocal Guided Waves

Romain Christophe Rémy Fleury, Haoye Qin, Qiaolu Chen, Zhechen Zhang

Nonreciprocal topological edge states based on external magnetic bias have been regarded as the last resort for genuine unidirectional wave transport, showing superior robustness over topological states with preserved time-reversal symmetry. However, fast ...

Wiley2024

Experimental observation of topological transition in linear and nonlinear parametric oscillators

Romain Christophe Rémy Fleury, Benjamin Apffel

Parametric oscillators are examples of externally driven systems that can exhibit two stable states with opposite phase depending on the initial conditions. In this work, we propose to study what happens when the external forcing is perturbed by a continuo ...

2024

Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection

Utku Karaca

Applications demanding imaging at low-light conditions at near-infrared (NIR) and short-wave infrared (SWIR) wavelengths, such as quantum information science, biophotonics, space imaging, and light detection and ranging (LiDAR), have accelerated the develo ...

EPFL2024

Inversing the actuation cycle of dielectric elastomer actuators for a facial prosthesis

Yves Perriard, Yoan René Cyrille Civet, Paolo Germano, Alexis Boegli, Thomas Guillaume Martinez, Stefania Maria Aliki Konstantinidi, Quentin Philippe Mario De Menech

Dielectric Elastomer Actuators (DEAs) are a type of smart material described as compliant capacitors. They show impressive performances as soft actuators, such as a high strain and fast response. Nonetheless, replicating natural muscle function with DEAs h ...

Society of Photo-Optical Instrumentation Engineers (SPIE)2024

Re-design of EU DEMO with a low aspect ratio

Hartmut Zohm

The design point that had been chosen for EU DEMO in 2016 is reviewed here and a modification is proposed with a lower aspect ratio. Previously the same aspect ratio, A, was chosen for EU DEMO as in major tokamak experiments including ITER (A = 3.1), and, ...

2024

Emulating Multimemristive Behavior of Silicon Nanowire-Based Biosensors by Using CMOS-Based Implementations

Sandro Carrara, Junrui Chen, Kapil Bhardwaj

The research presented in this article draws inspiration from previous efforts aimed at replicating the functions of various solid-state memristors using a variety of materials. The memristor circuit emulator serves as a cost-effective tool for circuit des ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

Elison de Nazareth Matioli, Zheng Hao, Alessandro Floriduz

In this work, we present a concept that leverages the strong piezoelectric polarization field in InGaN, which counteracts the external electric field at reverse bias. We show that despite the smaller InGaN band-gap and lower critical electric field, its st ...

2024

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