Publications related to Convexity of Resistive Circuit Characteristics

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Non-local Functionals Related to the Total Variation and Connections with Image Processing

Hoài-Minh Nguyên

We present new results concerning the approximation of the total variation,

\int_{\Omega} |\nabla u|

, of a function

u

by non-local, non-convex functionals of the form $$ \Lambda_\delta u = \int_{\Omega} \int_{\Omega} \frac{\delta \varphi \big( |u(x) - ...

2018

Convexity of Resistive Circuit Characteristics

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Approximate Kron Reduction Methods for Electrical Networks With Applications to Plug-and-Play Control of AC Islanded Microgrids

Galvanically Isolated Modular Converter

Advances in the characterization of nanowire photovoltaic devices

Yttrium zinc tin oxide high voltage thin film transistors

Characterization and Compact Modeling of Nanometer CMOS Transistors at Deep-Cryogenic Temperatures

Non-local Functionals Related to the Total Variation and Connections with Image Processing

Non-convex, non-local functionals converging to the total variation

Multi-analysis and modeling of asymmetry offset for Hall effect structures

A Technique for Calculating Voltages Induced on Twisted-Wire Pairs Using the FDTD Method

Charge Neutralization and Direct Thrust Measurements from Bipolar Pairs of Ionic- Electrospray Thrusters

Galvanically Isolated Modular Converter

Advances in the characterization of nanowire photovoltaic devices

Yttrium zinc tin oxide high voltage thin film transistors

Charge Neutralization and Direct Thrust Measurements from Bipolar Pairs of Ionic- Electrospray Thrusters

Multi-analysis and modeling of asymmetry offset for Hall effect structures

Non-local Functionals Related to the Total Variation and Connections with Image Processing

Approximate Kron Reduction Methods for Electrical Networks With Applications to Plug-and-Play Control of AC Islanded Microgrids

Non-convex, non-local functionals converging to the total variation

A Technique for Calculating Voltages Induced on Twisted-Wire Pairs Using the FDTD Method

Characterization and Compact Modeling of Nanometer CMOS Transistors at Deep-Cryogenic Temperatures