Phase transitions, anisotropy and domain engineering
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We have studied the polarization-electric-field hysteresis, the dielectric permittivity dispersion, the piezoelectric properties, the electric-field-induced strain, and the interrelations between these properties for bismuth ferrite (BiFeO3) ceramics. The ...
The reasons for the lower piezoelectric properties in the most studied lead-free piezoelectrics, modified (K,Na)NbO3 and (Bi0.5Na0.5)TiO3, are discussed. Contributions from domain wall motion and properties at the morphotropic phase boundary are considered ...
Many ferroelectric solid solutions exhibit enhanced electromechanical properties at the morphotropic boundary separating two phases with different orientations of polarization. The mechanism of properties enhancement is associated with easy paths for polar ...
The low-temperature magnetic phase diagram of the multiferroic system FeTe2O5Br down to 300 mK and up to 9 T is presented. Short-range magnetic correlations within the crystal layers start to develop already at similar to 50 K, i.e., far above T-N1 similar ...
The main mechanism of properties enhancement in the morphotropic phase boundary region separating tetragonal and rhombohedral phases of Pb(Zr1-xTix)O-3 (PZT) is related to polarization rotation. It is shown here that in proximity of the morphotropic phase ...
The piezoelectric properties of tetragonal BaTiO3 (BTO) crystals with a high density of 90° twin domain boundaries were experimentally investigated by Wada and Tsurumi (2004 Br. Ceram. Trans. 103 93). These crystals with engineered dense domain structures ...
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Nanoscale and mesoscopic disorder and associated local hysteretic responses underpin the unique properties of spin and cluster glasses, phase-separated oxides, polycrystalline ferroelectrics, and ferromagnets alike. Despite the rich history of the field, t ...
In this paper we report work on a modified potassium sodium niobate composition that has the potential to replace PZT for piezoelectric thin film applications. Pulsed laser depositions were undertaken on platinised Si substrates. The resultant films were f ...