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Processing and properties of thin film pyroelectric devices

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In-plane piezoelectric coefficient of PZT thin films as a function of composition

Paul Muralt, Stéphane Hiboux, Andreas Seifert, Nicolas Ledermann

The effective piezoelectric coefficient e(31) has been measured on sol-gel processed Pb(ZrxTi1-x)O-3 thin films with Zr concentrations ranging from 45 to 60%. The largest value was observed at 45% Zr, although dielectric constant and effective d(33) peak a ...

1999

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The domain nucleation and growth during the switching process in ferroelectric PZT thin film capacitors was observed using atomic force microscope (AFM) technique combined with a lock-in amplifier. The measured phase difference between the tip vibration si ...

1999

Self-polarization effect in Pb(Zr,Ti)O-3 thin films

Nava Setter, Stéphane Hiboux

The self-polarization effect is investigated in Pb(Zr,Ti)O-3 (PZT) thin films deposited by sol-gel and magnetron sputtering techniques. The effective piezoelectric coefficient of as-grown films, which is proportional to their initial polarization (self-pol ...

1998

High figure-of-merit porous Pb1-xCaxTiO3 thin films for pyroelectric applications

Nava Setter, Paul Muralt, Andreas Seifert

The pyroelectric properties of Pb1-xCaxTiO3 (x = 0-0.3) thin films have been greatly improved by including porosity in the microstructure. Control of nucleation and growth by variation of the heating rate was used to process porous, low dielectric constant ...

1998

Pyroelectric thin-film sensor array

Nava Setter, Paul Muralt, Peter Ryser

Pyroelectric thin-film point detectors and 1 x 12 arrays have been fabricated and characterized. They consist of sol-gel-deposited PZT thin-film elements on micromachined Si3N4/SiO2 membranes. The measured current and voltage response as a function of modu ...

1997

Photoinduced poling of lead titanate zirconate thin films

Nava Setter

The influence of ultraviolet (UV) illumination on piezoelectric properties is investigated in lead zirconate titanate (PZT) thin films. It is found that the poling procedure is more effective when the film is exposed to a broadband UV light in the presence ...

1997

Pyroelectric thin film 12-element linear arrays (element size 0.4x0.9 mm(2)) have been fabricated by standard photolithography techniques on silicon substrates. A voltage responsivity of almost 800 V/W in air and 3000 V/W in vacuum is measured at low frequ ...

1997

We have studied deposition by in-situ reactive sputtering of ferroelectric Pb(ZrxTi1-x)O3 (PZT) thin films on Pt and RuO2 electrodes, using temperatures in the 490-620°C range. Nucleation on the electrode was found to be of prime importance for the formati ...

EPFL1997

Piezoelectric thin films for MEMS

Paul Muralt

A short overview is given on deposition and integration of PZT thin films on silicon for MEMS applications. The application principles are explained and the piezoelectric coefficients are compared with the ones of AlN and ZnO. The materials figure of merit ...

1997

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The mechanical response of piezoelectric cantilever beams actuated by sol-gel- derived lead zirconium titanate (PZT) thin film is reported. Small multilayered beams are used to analyse the converse piezoelectric effect and to measure the mechanical deflect ...

1996