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Fatigue, Rejuvenation and Self-Restoring in Ferroelectric Thin-Films

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Monocrystalline PZT thin films

Mahamudu Mtebwa

"More with less" has been the motto behind the hardware miniaturization trend in the microelectronics industry since the 1970s. Active research in the growth of oxide films, including ferroelectrics, which started soon after, followed the same trend. Meanw ...

EPFL2015

Polarization charge as a reconfigurable quasi-dopant in ferroelectric thin films

Nava Setter, Alexander Tagantsev, Tomas Sluka, Arnaud Robert André Crassous

Impurity elements used as dopants are essential to semiconductor technology for controlling the concentration of charge carriers. Their location in the semiconductor crystal is determined during the fabrication process and remains fixed. However, another p ...

Nature Publishing Group2015

Formation of charged ferroelectric domain walls with controlled periodicity

Nava Setter, Alexander Tagantsev, Dragan Damjanovic, Tomas Sluka, Petr Bednyakov

Charged domain walls in proper ferroelectrics were shown recently to possess metallic-like conductivity. Unlike conventional heterointerfaces, these walls can be displaced inside a dielectric by an electric field, which is of interest for future electronic ...

Nature Publishing Group2015

Polarization Switching and Domain Wall Motion in Circular and Ring Capacitor Structures in PZT Thin Films

Nava Setter, Ludwig Feigl

Ferroelectric switching in circular and ring capacitors has been performed using a stroboscopic mode of piezoresponse force microscopy. A simple geometric model incorporating the characteristic domain wall motion is sufficient to describe the switching of ...

Taylor & Francis2015

Mobile Domain Walls as a Bridge between Nanoscale Conductivity and Macroscopic Electromechanical Response

Dragan Damjanovic

The interfaces in complex oxides present unique properties exploitable in nanoscale devices. Recent studies on ferroelectric BiFeO3, BaTiO3, and Pb(Zr, Ti) O-3 have revealed an unusually high electric conductivity of the domain walls (DWs), adding another ...

Wiley-Blackwell2015

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We report the qualitative study of the influence of both elastic compliances and higher order terms of Landau free energy potential on the phase diagram of Pb(Zr0.5Ti0.5)O-3 thin films by using a single domain Landau theory. Although the impact of elastic ...

Amer Inst Physics2014

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Lead zirconate titanate (PZT) thin films on insulator-buffered silicon substrates with interdigitated electrodes (IDEs) have the potential to harvest more energy than parallel plate electrode (PPE) structures because the former exploit the longitudinal pie ...

Ieee-Inst Electrical Electronics Engineers Inc2013

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The properties of ferroelectric materials, such as lead zirconate titanate (PZT), are heavily influenced by the interaction of defects with domain walls. These defects are either intrinsic or are induced by the addition of dopants. We study here PbTiO3 (th ...

Amer Physical Soc2013

We have combined Piezoresponse Force Microscopy and Kelvin Probe Force Microscopy (KPFM) to study screening charge dynamics in written domains on PbZr0.2Ti0.8O3 (PZT) thin film surfaces under a controlled environment and at variable temperature. The screen ...

Amer Inst Physics2013

This thesis consists of a theoretical analysis of charged domain walls in ferroelectrics based on Landau theory and the theory of semiconductors. First, the internal structure of a 180-degree charged domain wall is considered. It is shown that different re ...

EPFL2012