Publication

Identification of Passive Layer in Ferroelectric Thin-Films from Their Switching Parameters

Related publications (39)

Polarization response of Perovskite films for microwave tunable applications

Ferroelectric thin films are widely studied nowadays as potential replacements for semiconductors in modern tunable microwave devices such as tunable filters, phase-shifters, frequency mixers, power dividers, etc. Recent progress in the deposition of compl ...

EPFL2004

Kinetics of polarization reversal in ferroelectric films: role of domain nucleation and domain wall motion

Nava Setter, Alexander Tagantsev, Igor Stolichnov, Enrico Colla

Understanding of polarization reversal mechanisms in ferroelectric films is essential for evaluation and prediction of the properties of ferroelectric devices including nonvolatile memories. The widely accepted approach based on the domain wall motion kine ...

2004

Patterned and self-assembled ferroelectric nano-structures obtained by epitaxial growth and e-beam lithography

Simon Bühlmann

The continuous downscaling of microelectronic circuits combined with increasing interest in ferroelectric thin films for non-volatile random access memories (FeRAM) is drawing great attention to small ferroelectric thin film structures. There are various c ...

EPFL2004

Films minces relaxeur-ferroélectriques à base de Pb(Mg1/3NB2/3)O3

Zian Kighelman

Relaxor Pb(Mg1/3Nb2/3)O3(PMN) and its solid solutions with ferroelectric PbTiO3 (PT) are of considerable interest from both the applications and the scientific point of view. In the past, many attempts were made to prepare and study the properties of these ...

EPFL2002

Characterization and model of ferroelectrics based on experimental Preisach density

Paul Muralt

In this article an experimental method of characterization and modeling of ferroelectric materials is presented. The reversible and irreversible contributions of polarization are separated. The measurements of these effects are performed simultaneously giv ...

2002

Constant-current study of dielectric breakdown of Pb(Zr,Ti)O-3 ferroelectric film capacitors

Nava Setter, Alexander Tagantsev, Igor Stolichnov, Serguei Okhonin

This paper addresses the problem of time-dependent dielectric breakdown of Pb(Zr,Ti)O-3 (PZT) thin films. It is shown by using constant-current breakdown measurements, that for PZT film capacitors with Pt and SrRuO3 (SRO) electrodes the breakdown onset is ...

2001

Charge relaxation at the interfaces of low-voltage ferroelectric film capacitors: Fatigue endurance and size effects

Nava Setter, Alexander Tagantsev, Igor Stolichnov, Enrico Colla

A unified approach for analysis of polarization fatigue and size effects on ferroelectric switching in relationship with injection and entrapment of charge at the interfacial layer of the ferroelectric film is developed. The proposed model suggests that an ...

2001

Downscaling of Pb(Zr,Ti)O-3 film thickness for low-voltage ferroelectric capacitors: Effect of charge relaxation at the interfaces

Nava Setter, Paul Muralt, Alexander Tagantsev, Igor Stolichnov, Enrico Colla, Stéphane Hiboux

In this communication we address two issues essential for low-voltage memory applications of ferroelectric thin films: the size effect on polarization switching, and polarization fatigue. According to the proposed concept, both of these phenomena are contr ...

2000

Pt-ion-implantation-induced suppression of leakage conduction in Pt/Pb(ZrxTi1-x)O-3/Pt capacitors

Alexander Tagantsev, Igor Stolichnov

The effect of 1 MeV ion implantation on leakage conduction, dielectric and ferroelectric properties of the Pt/Pb(ZrxTi1-x)(2)O-3/Pt capacitors is studied for a wide range of implantation doses (10(10)-10(16) cm(-2)). It is shown that the implantation of Pt ...

1999

Injection-controlled size effect on switching of ferroelectric thin films

Alexander Tagantsev, Igor Stolichnov

The effect of near-by-electrode charge injection on switching of a thin film ferroelectric capacitor is theoretically analyzed. We develop a model of switching affected by charge injection through a surface dielectric layer to calculate the coercive field ...

1999

Graph Chatbot

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.