Microstructure, electrical conductivity, and piezoelectric properties of bismuth titanate
Related publications (33)
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
Relaxor-ferroelectric single crystals PZN-xPT [(1-x)Pb(Zn1/3Nb2/3)O3-xPbTiO3] and PMN-xPT [(1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3] continue to attract much interest due to their anomalously large piezoelectric properties (d33 > 2000 pm/V; k33 > 90%) when poled ("do ...
Charged domain walls in proper ferroelectrics were shown recently to possess metallic-like conductivity. Unlike conventional heterointerfaces, these walls can be displaced inside a dielectric by an electric field, which is of interest for future electronic ...
Colossal magnetoresistance (CMR) and colossal electroresistance (CER) induced by the electric field in spinel multiferroic CdCr2S4 are reported. It is found that a metal-insulator transition in CdCr2S4 is triggered by the electrical field. In magnetic fiel ...
Strain response of polycrystalline barium titanate (BaTiO3) was investigated under high unipolar electric field (0 to 4 kV/mm) and compressive stress (0 to 400 MPa) in the temperature range from 25 to 160 degrees C. In the vicinity of the Curie point (T-C) ...
American Institute of Physics2012
This thesis consists of a theoretical analysis of charged domain walls in ferroelectrics based on Landau theory and the theory of semiconductors. First, the internal structure of a 180-degree charged domain wall is considered. It is shown that different re ...
EPFL2012
The correlation between structure and electrical properties of lead-free (1-x)(Bi1/2Na1/2)TiO3-xBaTiO(3) (BNT-100xBT) polycrystalline piezoceramics was investigated systematically by in situ synchrotron diffraction technique, combined with electrical prope ...
We calculate from first principles the nonlinear piezoelectric response of ferroelectric PbTiO3 for the case of a polarization-enhancing electric field applied along the tetragonal axis. We focus mainly on the case of fixed in-plane lattice constants, corr ...
The capability of switching the spontaneous polarisation under an applied electric field in ferroelectric materials can be exploited for the use in low power, non-volatile, re-writable memory devices. Currently available commercially is ferroelectric rando ...
The continuous downscaling of microelectronic circuits combined with increasing interest in ferroelectric thin films for non-volatile random access memories (FeRAM) is drawing great attention to small ferroelectric thin film structures. There are various c ...
EPFL2004
, , ,
Impurity elements used as dopants are essential to semiconductor technology for controlling the concentration of charge carriers. Their location in the semiconductor crystal is determined during the fabrication process and remains fixed. However, another p ...
