Size effects in polarization switching in ferroelectric thin films
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The dielectric response of a ferroelectric film with bilinear coupling between order parameter and strain is theoretically addressed. An exact solution for the total (lattice and domain contributions) dielectric permittivity of the system for the case wher ...
Relaxor Pb(Mg1/3Nb2/3)O3(PMN) and its solid solutions with ferroelectric PbTiO3 (PT) are of considerable interest from both the applications and the scientific point of view. In the past, many attempts were made to prepare and study the properties of these ...
Relaxor ferroelectric thin films exhibit a drastic reduction in the dielectric constant and associated properties in the thin film form, even for thicknesses in the micron range, which are essentially infinity for the size effects typically investigated in ...
Relaxor Pb(Sc-12/Ta-1/2)O-3 (PST) thin films have been prepared using mixed alkoxide and acetate precursors on TiO2/Pt/TiO2/SiO2/Si substrates. Relaxor behavior as evidenced by frequency dispersion of the permittivity as a function of temperature was obser ...
The (1-x)Pb(Sc1/2Nb1/2)O-3-xPbTiO(3)(x=0.4, PSNT(60/40)) thin films near the morphotropic phase boundary(MPB) composition were successfully deposited via sol-gel method. Taking the strict controls of processing factors such as the stable and homogeneous pr ...
In ferroelectric materials, domain wall displacement plays a key role in the dielectric properties measured with respect to the driving field amplitude and frequency. The low to medium field dielectric response in many ferroic systems can be often describe ...
Sol-gel process has successfully been applied for the deposition of porous PbZrxTi1-xO3 (x = 0.45, 0.15) thin films on platinized silicon wafers. Addition of a polymer as a volatile phase to the precursor sol prior to spin coating has been proved an excell ...
Systems with a ferroelectric to paraelectric transition in the vicinity of room temperature are useful for devices. Adjusting the ferroelectric transition temperature (T-c) is traditionally accomplished by chemical substitution - as in BaxSr1-xTiO3, the ma ...
Ferroelectric thin films are widely studied nowadays as potential replacements for semiconductors in modern tunable microwave devices such as tunable filters, phase-shifters, frequency mixers, power dividers, etc. Recent progress in the deposition of compl ...
The continuous downscaling of microelectronic circuits combined with increasing interest in ferroelectric thin films for non-volatile random access memories (FeRAM) is drawing great attention to small ferroelectric thin film structures. There are various c ...