Pt-ion-implantation-induced suppression of leakage conduction in Pt/Pb(ZrxTi1-x)O-3/Pt capacitors
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The dielectric response in Bi4Ti3O12 single crystals was studied at subswitching conditions at relative low temperatures (20-250 degrees C) and frequencies (100 mHz to 10kHz) both in-plane and out-of-plane. Electron-holes are likely to be the major charge ...
Silicon technology has advanced at exponential rates both in performances and productivity through the past four decades. However the limit of CMOS technology seems to be closer and closer and in the future we might see an increasing number of hybrid appro ...
Ferroelectrics are characterised by a spontaneous polarisation that can be reversed by an external electric field. The stability of the polarisation states and the possibility for controlled switching between the states render ferroelectric materials very ...
The dielectric, electrical and structural properties of (1-x) (0.94Bi(1/2)Na(1/2)TiO(3)-0.06BaTiO(3))-xK(0.5)Na(0.5)NbO(3) (BNT-BT-xKNN) with x=0.09, 0.12, 0.15, and 0.18 were investigated as potential candidates for high-temperature capacitors with a work ...
American Institute of Physics2011
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Antiferroelectrics are essential ingredients for the widely applied piezoelectric and ferroelectric materials: the most common ferroelectric, lead zirconate titanate is an alloy of the ferroelectric lead titanate and the antiferroelectric lead zirconate. A ...
Nature Publishing Group2013
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RF microelectromechanical systems (MEMS) capacitive switches for two different dielectrics, aluminum nitride (AlN) and silicon nitride (Si3N4), are presented. The switches have been characterized and compared in terms of DC and RF performance (5-40 GHz). S ...
An evidence that the dielectric aging in the polydomain Pb(Zr0.45Ti0.55)O-3 thin films is controlled by progressive pinning of 180 degrees domain walls is presented. To provide such a conclusion, we use a general method, which is based on the study of the ...
2009
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The reliability and charging/discharging dynamics of wideband (1.5-14GHz) phase shifters made of MEMS capacitive switches using Aluminum Nitride (AlN) as dielectric are originally reported. Phase shifter lifetimes exceeding 109 cycles are achieved in hot-c ...
2009
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In this work we present a novel strategy to fabricate printed comb electrodes devices with decreased size by the introduction of a thin dielectric layer between the two combs. The electrical insulation of the two polarities prevents short-cuts occurring be ...
FAIMS's ion separation mechanism is based on analyte's characteristic nonlinear relationship between its ion mobility and applied electric field strength. Present characterization methods for this nonlinear relationship are based on precarious assumptions ...
