Sputtered silicon carbide thin films as protective coating for MEMS applications
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Capture numbers are used in models of nucleation and growth on surfaces, and have been widely applied to predict nucleation densities and other quantities via rate equations. In conventional nucleation theory, much effort has historically been expended on ...
Light Induced Chemical Vapour Deposition (LICVD) of titanium dioxide thin films is studied in this work. It is shown that this technique enables to deposit locally and selectively a chosen crystalline phase with a precise controlled thickness at low substr ...
In the present work, several series with variation of deposition parameters such as hydrogen dilution ratio, VHF-power and plasma excitation frequency fexc have been extensively analyzed. Compared with `conventional' more-stable layers obtained at 200-250 ...
A combined PVD/PECVD process for the vacuum deposition of titaniumcontainingamorphoushydrogenatedcarbonfilms is described. Elemental compositions of the deposited films have been determined by in situ core level photoelectron spectroscopy (XPS). The long-t ...
A numerical two dimensional model to calculate the deposition uniformity over the whole electrode surface in large area rectangular plasma enhanced chemical vapour deposition reactors is presented. In this model, the three dimensional mass and species cont ...
Designing plasma-enhanced chemical vapour deposition (PECVD) reactors to coat large-area glass plates (similar to1 m(2)) for flat panel display or solar cell manufacturing raises challenging issues in physics and chemistry as well as mechanical, thermal, a ...
The anodic oxidn. of H2SO4 to H2S2O8 was investigated on B-doped synthetic diamond electrodes obtained by hot filament chem. vapor deposition. High current efficiency for H2S2O8 formation can be achieved in concd. H2SO4 (7.5 mol dm-3) and using high curren ...
We report the fabrication of high-finesse strongly coupled microcavities composed of a polystyrene film doped with the dye tetraphenyl-porphyrin zinc positioned between two high reflectivity dielectric mirrors. The bottom mirror was deposited by plasma enh ...
The invention relates to an effusing source for film deposition made of a reservoir comprising one hole characterized by the fact that the hole diameter is less than one order of magnitude than the mean free path of the molecules determined by the pressure ...
ECOLE POLYTECHNIQUE FEDERALE LAUSANNE (ECOL-Non-standard) BENVENUTI G (BENV-Individual) AMOROSI S (AMOR-Individual) HALARY-WAGNER E (HALA-Individual)2002
Highly textured PZT(111), PZT(001/100) and random PZT films have been grown on Pt and RuO2 bottom electrodes by means of an in-situ, multimagnetron reactive sputtering process with three metal targets (Pb, Zr, Ti). The orientation was varied with the botto ...