Piezoelectric properties of rhombohedral Pb(Zr, Ti)O-3 thin films with (100), (111), and "random" crystallographic orientation
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Pyrochlore free Pb(Mg1/3Nb2/3)O-3 (PMN) thin films were prepared from alkoxide-based solution precursors. The influence of different seeding layers and chemical solution on the microstructures is shown. Dielectric, electrostrictive, and piezoelectric prope ...
The domain nucleation and growth during polarization switching in Pb(Zr,Ti)O-3 (PZT) ferroelectric thin film capacitors with Pt top (TE) and bottom electrodes (BE) were studied by means of atomic force microscopy (AFM). The experimental configuration used ...
The present study aims at a better understanding of the high piezoelectric properties encountered in lead-based ferroelectrics by focusing on the extrinsic contributions to the response. The main characteristics of these materials are the highly nonlinear ...
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(Al,Ga)N/GaN quantum wells have been studied by temperature-dependent luminescence and reflectivity. The samples were grown by molecular beam epitaxy on (0001) sapphire substrates, and well widths were varied from 3 to 15 monolayers (ML's) with a 2-ML incr ...
We have studied deposition by in-situ reactive sputtering of ferroelectric Pb(ZrxTi1-x)O3 (PZT) thin films on Pt and RuO2 electrodes, using temperatures in the 490-620°C range. Nucleation on the electrode was found to be of prime importance for the formati ...
The domain nucleation and growth during the switching process in ferroelectric PZT thin film capacitors was observed using atomic force microscope (AFM) technique combined with a lock-in amplifier. The measured phase difference between the tip vibration si ...
The influence of ultraviolet (UV) illumination on piezoelectric properties is investigated in lead zirconate titanate (PZT) thin films. It is found that the poling procedure is more effective when the film is exposed to a broadband UV light in the presence ...