Publication

Development of relaxor ferroelectric materials for screen-printing on alumina and silicon substrates

Related publications (61)

Label-free detection of Babesia bovis infected red blood cells using impedance spectroscopy on microfabricated flow cytometer

Philippe Renaud, Thomas Michael Braschler, Nicolas Demierre

Impedance spectroscopy is a powerful tool for label-free analysis and characterisation of living cells. In this work, we achieved the detection of Babesia bovis infected red blood cells using impedance spectroscopy on a microfabricated flow cytometer. The ...

2007

Adsorption monitoring device

Hubert Girault, Jean-Pierre Abid

A device for monitoring the adsorption of target molecules on a substrate, the device comprising a substrate (1), at least a portion of which is formed as a thin dielectric layer. A first, modified surface (2) of the layer has ionizable groups of the subst ...

2006

Mechanism of interfacial layer suppression after performing surface Al(CH3)3 pretreatment during atomic layer deposition of Al2O3

Wei Chen, Min Xu

During atomic layer deposition of high permittivity (high-k) metal oxide gate dielectrics, an interfacial layer (IL) containing SiOx between high-k dielectric and Si substrate is almost unavoidable. However, an Al(CH3)(3) (TMA) pretreatment for 3600 s on H ...

American Institute of Physics2006

Electronic and dielectric properties of a suboxide interlayer at the silicon-oxide interface in MOS devices

Alfredo Pasquarello

We study the electronic structure and the dielectric permittivity of ultrathin oxide layers on Si(I 00) substrates. By considering two different Si(l 00)-SiO2 interface models, we first show that the electronic structure in the interfacial oxide differs fr ...

2005

Theory of atomic-scale dielectric permittivity at insulator interfaces

Alfredo Pasquarello

We develop a theory for investigating atomic-scale dielectric permittivity profiles across interfaces between insulators. A local susceptibility chi(x;omega) is introduced to describe variations of the dielectric response over length scales of the order of ...

2005

Infrared properties of the Si-SiO2 interface from first principles

Feliciano Giustino

We study the infrared properties of the Si-SiO2 interface within a first-principles approach. In order to provide an atomic-scale description of the dielectric permittivity (both high-frequency and static) and of the infrared absorption at the interface, w ...

EPFL2005

Susceptibility anomaly in films with bilinear coupling between order parameter and strain

Alexander Tagantsev

The dielectric response of a ferroelectric film with bilinear coupling between order parameter and strain is theoretically addressed. An exact solution for the total (lattice and domain contributions) dielectric permittivity of the system for the case wher ...

2005

Modelling of dielectric constants of amorphous Zr silicates

Alfredo Pasquarello

We discuss various decomposition schemes for analysing the dielectric constants of Zr silicates in terms of local properties. Such schemes serve the purpose of predicting the dielectric constants of amorphous alloys, when their system size precludes the po ...

2005

Supercapacitive Admittance Tomoscopy

Hubert Girault, Jean-Pierre Abid

A sensor for measuring adsorption on a substrate has been designed including a contactless detection scheme, called supercapacitive admittance tomoscopy (SCAT). The sensor comprises a thin dielectric layer with two parallel band electrodes on the one side ...

2005

Low-temperature thick-film dielectrics and resistors for metal substrates

Peter Ryser, Thomas Maeder, Caroline Jacq, Sonia Vionnet Menot

In this work, a set of low-temperature thick-film dielectrics consisting of two high-lead low-temperature glasses, stabilised by various amounts of alumina filler, is characterised on alumina and aluminium metal, as a function of firing temperature. Corres ...

2005

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