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Physical model of retention and temperature-dependent polarization reversal in ferroelectric films

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A method for driving piezoelectric elements of a micro-system. The piezoelectric elements comprising a ferroelectric thin film, and being configured to be part of any one or a combination of items of a list comprising: a cantilever, a bridge, a diaphragm, ...

2020

Interface-Dominated Time-Dependent Behavior of Poled Poly(Vinylidene Fluoride–Trifluoroethylene)/Barium Titanate Composites

Véronique Michaud, Yves Leterrier, Dragan Damjanovic, Sara Dalle Vacche

Composites in which particles of ferroelectric ceramic phase are randomly dispersed in a polymeric matrix are of interest because of flexibility, conformability, and ease of processing. However, their piezoelectric properties are rather low, unless very hi ...

2020

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This correspondence highlights that the Gibbs free energy description of a ferroelectric capacitor in series with a paraelectric capacitor, depends on the initial charge on the plates of the ferroelectric capacitor. An incomplete Gibbs free energy descript ...

2020

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HfO2-based ferroelectrics have dramatically changed the application perspectives of polarization-switching materials for information processing and storage. Their CMOS compatibility and preservation of high reversible polarization down to a few nanometer t ...

AMER INST PHYSICS2020

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The steep-slope ferroelectric tunnel-FET (SS-FeTFET), consisting of an InGaAs TFET with a sub-60 mV/dec subthreshold swing (SS) at room temperature and an externally connected high-quality single-crystalline PZT capacitor, displays improved SS compared to ...

2019

Design Considerations of Ferroelectric Properties for Negative Capacitance MOSFETs

Mihai Adrian Ionescu, Christian Enz, Farzan Jazaeri, Ali Saeidi

Impact of physical parameters of ferroelectric layer on the performance of Negative Capacitance (NC) MOSFETs is experimentally studied in this paper. Electrical behaviors of PZT-based and Si:HfO2-based NC-FETs are investigated and discussed. In a PZT-based ...

2018

Stabilization of ferroelectric HfxZr1-xO2 films using a millisecond flash lamp annealing technique

Eamon Patrick O'Connor, Stefan Abel

We report on the stabilization of ferroelectric HfxZr1-xO2 (HZO) films crystallized using a low thermal budget millisecond flash lamp annealing technique. Utilizing a 120 s 375 degrees C preheat step combined with millisecond flash lamp pulses, ferroelectr ...

AMER INST PHYSICS2018

Nonlinear dynamics of polar regions in paraelectric phase of (Ba1-x,Srx)TiO3 ceramics

Dragan Damjanovic

The dynamic dielectric nonlinearity of barium strontium titanate (Ba1-x, Sr-x) TiO3 ceramics is investigated in their paraelectric phase. With the goal to contribute to the identification of the mechanisms that govern the dielectric nonlinearity in this fa ...

American Institute of Physics2017

Contribution of spontaneous polarization and its fluctuations to refraction of light in ferroelectrics

Alexander Tagantsev

The expressions for the spontaneous polar contribution delta n (i) (s) to the principal values of the refractive index due to the quadratic electro-optic effect in ferroelectrics have been considered within the phenomenological approach taking into account ...

Maik Nauka/Interperiodica/Springer2016

Polarization Switching and Domain Wall Motion in Circular and Ring Capacitor Structures in PZT Thin Films

Nava Setter, Ludwig Feigl

Ferroelectric switching in circular and ring capacitors has been performed using a stroboscopic mode of piezoresponse force microscopy. A simple geometric model incorporating the characteristic domain wall motion is sufficient to describe the switching of ...

Taylor & Francis2015