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Physical model of retention and temperature-dependent polarization reversal in ferroelectric films

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Charge relaxation at the interfaces of low-voltage ferroelectric film capacitors: Fatigue endurance and size effects

Nava Setter, Alexander Tagantsev, Igor Stolichnov, Enrico Colla

A unified approach for analysis of polarization fatigue and size effects on ferroelectric switching in relationship with injection and entrapment of charge at the interfacial layer of the ferroelectric film is developed. The proposed model suggests that an ...

2001

Polarization fatigue in ferroelectric films: Basic experimental findings, phenomenological scenarios, and microscopic features

Nava Setter, Alexander Tagantsev, Igor Stolichnov, Enrico Colla

The reduction in switchable polarization of ferroelectric thin films due to electrical stress (polarization fatigue) is a major problem in ferroelectric nonvolatile memories. There is a large body of available experimental data and a number of existing mod ...

2001

Downscaling of Pb(Zr,Ti)O-3 film thickness for low-voltage ferroelectric capacitors: Effect of charge relaxation at the interfaces

Nava Setter, Paul Muralt, Alexander Tagantsev, Igor Stolichnov, Enrico Colla, Stéphane Hiboux

In this communication we address two issues essential for low-voltage memory applications of ferroelectric thin films: the size effect on polarization switching, and polarization fatigue. According to the proposed concept, both of these phenomena are contr ...

2000

High resolution study of domain nucleation and growth during polarization switching in Pb(Zr,Ti)O-3 ferroelectric thin film capacitors

Nava Setter, Paul Muralt, Alexander Tagantsev, Enrico Colla

The domain nucleation and growth during polarization switching in Pb(Zr,Ti)O-3 (PZT) ferroelectric thin film capacitors with Pt top (TE) and bottom electrodes (BE) were studied by means of atomic force microscopy (AFM). The experimental configuration used ...

1999

Observation of domain nucleation and growth during switching process

Nava Setter, Paul Muralt, Alexander Tagantsev, Enrico Colla

The domain nucleation and growth during the switching process in ferroelectric PZT thin film capacitors was observed using atomic force microscope (AFM) technique combined with a lock-in amplifier. The measured phase difference between the tip vibration si ...

1999

The effect of 1 MeV ion implantation on leakage conduction, dielectric and ferroelectric properties of the Pt/Pb(ZrxTi1-x)(2)O-3/Pt capacitors is studied for a wide range of implantation doses (10(10)-10(16) cm(-2)). It is shown that the implantation of Pt ...

1999

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Fatigued state of the Pt-PZT-Pt system is studied by means of low-temperature conduction measurements. It is shown that the conduction in the temperature interval of 100-140 degrees K is determined by the cold field emission of electrons (tunneling conduct ...

1999

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It was recently suggested, basing on the analysis of a wide range of macroscopic experimental results([1-4]), that fatigue in ferroelectric thin film capacitors, particularly in the case of PZT with metallic electrodes (Pt), must be related to the freezing ...

1998

A surprising non-cumulative effect of the degradation mechanism (fatigue) of the switched polarization (P-r(s)), was observed in MOCVD and sol-gel prepared Pb(Zr0.47Ti0.53)O-3 (PZT) ferroelectric thin films capacitors (FECAP) with Pt-electrodes. This effec ...

1998

Ferroelectric, dielectric and piezoelectric properties of ferroelectric thin films and ceramics are reviewed with the aim of providing an insight into different processes which may affect the behaviour of ferroelectric devices, such as ferroelectric memori ...

1998