Physical model of retention and temperature-dependent polarization reversal in ferroelectric films
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A ferroelectric film capacitor structure (FeCAP), in particular for memory applications, comprises a layer of doped ferroelectric material between facing electrodes having a varying/asymmetric doping profile, the concentration of the dopant in the ferroele ...
We studied polarization switching of 295 nm thick -oriented-Pb(Zr0.45Ti0.55)O-3 (PZT) thin-film capacitors through a polarization hysteresis loop and piezoelectric force microscopy (PFM) on top of the Pt electrode. Positive voltage pulses of 450 kV/cm ...
2002
The continuous downscaling of microelectronic circuits combined with increasing interest in ferroelectric thin films for non-volatile random access memories (FeRAM) is drawing great attention to small ferroelectric thin film structures. There are various c ...
EPFL2004
Stress-induced changes in the imprint and switching behavior of (111)-oriented Pb(Zr,Ti)O-3 (PZT)-based capacitors have been studied using piezoresponse force microscopy. Visualization of polarization distribution and d(33)-loop measurements in individual ...
The present study aims at a better understanding of the high piezoelectric properties encountered in lead-based ferroelectrics by focusing on the extrinsic contributions to the response. The main characteristics of these materials are the highly nonlinear ...
This paper addresses the problem of time-dependent dielectric breakdown of Pb(Zr,Ti)O-3 (PZT) thin films. It is shown by using constant-current breakdown measurements, that for PZT film capacitors with Pt and SrRuO3 (SRO) electrodes the breakdown onset is ...
The occurrence of switching-induced suppression of the remanent polarization (fatigue) in Pb(Zr,Ti)O-3 (PZT) ferroelectric capacitors with comb shaped top electrodes was studied by means of scanning force microscopy assisted by a lock-in amplifier. Fatigue ...
2001
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The phenomenon of polarization imprint consisting of the development of a preferential polarization state in ferroelectric films is known as one of the major issues impacting the development of high density ferroelectric memories. According to the commonly ...
The direct observation of blocked polarization domains at the electrode-ferroelectric interface of electrically fatigued ferroelectric films is reported. Blocked nanodomains are believed to be the origin of polarization fatigue in ferroelectric nonvolatile ...
2003
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Understanding of polarization reversal mechanisms in ferroelectric films is essential for evaluation and prediction of the properties of ferroelectric devices including nonvolatile memories. The widely accepted approach based on the domain wall motion kine ...
