Publication

Bicasrcuo-Semiconductor Interface Formation Processes

Giorgio Margaritondo, Helmuth Berger
1991
Journal paper

Abstract

The deposition of Si and Ge on single-crystal 2212 BiCaSrCuO was studied with synchrotron-radiation photoemission. Contrary to previous results on polycrystalline substrates, clear evidence was found for substitutional reactions involving Bi.

Official source

https://infoscience.epfl.ch/record/90088?ln=en

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Bicasrcuo-Semiconductor Interface Formation Processes

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