Publications related to Interface formation and chemical reactions on metal-GaTe(001) surfaces

Benchmarking machine-readable vectors of chemical reactions on computed activation barriers

Ksenia Briling, Puck Elisabeth van Gerwen, Yannick Calvino Alonso, Malte Martin Franke

In recent years, there has been a surge of interest in predicting computed activation barriers, to enable the acceleration of the automated exploration of reaction networks. Consequently, various predictive approaches have emerged, ranging from graph-based ...

Royal Soc Chemistry2024

p-GaN field plate for low leakage current in lateral GaN Schottky barrier diodes

Elison de Nazareth Matioli, Luca Nela, Catherine Erine

High-voltage gallium nitride Schottky barrier diodes (SBDs) suffer from large off-state leakage current, which further degrades during operation at high temperatures and limits the device blocking capabilities. The key to achieving low off-state leakage is ...

2021

Revisiting the concept of extents for chemical reaction systems using an enthalpy balance

Dominique Bonvin, Diogo Filipe Mateus Rodrigues

For the investigation of complex reaction systems, it has been proposed to decouple the various rate processes using a linear time-invariant transformation that is constructed from knowledge of stoichiometry, reaction enthalpies, inlet compositions and tem ...

PERGAMON-ELSEVIER SCIENCE LTD2020

Production of Additive‐Free Amorphous Nanoparticles with a SAW‐Based Microfluidic Spray‐Dryer

Esther Amstad, Huachuan Du, Mathias Steinacher, Duncan Christophe Emmanuel Gilbert

Spray‐drying is a widely employed, cost‐effective process to formulate solutions into solid particles of controlled sizes and compositions. In addition, this process can also offer control over the structure of spray‐dried particles: if the solvent is evap ...

2019

Doping-Free Complementary Logic Gates Enabled by Two-Dimensional Polarity-Controllable Transistors

Giovanni De Micheli, Giovanni Vincenzo Resta, Pierre-Emmanuel Julien Marc Gaillardon

Atomically thin two-dimensional (2D) materials belonging to transition metal dichalcogenides, due to their physical and electrical properties, are an exceptional vector for the exploration of next-generation semiconductor devices. Among them, due to the po ...

2018

MoS2/VO2 vdW heterojunction devices: Tunable rectifiers, photodiodes and field effect transistors

Olivier Martin, Mihai Adrian Ionescu, Arnaud Magrez, Andreas Schueler, Anna Krammer, Emanuele Andrea Casu, Chen Yan, Nicolò Oliva

In this work we report a new class of ultra-thin film devices based on n-n van der Waals (vdW) heteroj unctions of MoS2 and VO2, which show remarkable tunable characteristics. The favorable band alignment combined with the sharp and clean vdW interface det ...

2018

Enhanced Electrical Performance and Heat Dissipation in AlGaN/GaN Schottky Barrier Diodes Using Hybrid Tri-anode Structure

Elison de Nazareth Matioli, Jun Ma, Giovanni Santoruvo, Pulkit Tandon

Enhanced performance in AlGaN/GaN Schottky barrier diodes (SBDs) is investigated using a nanowire hybrid tri-anode structure that integrates 3-D Schottky junctions with tri-gate transistors. The fabricated SBDs presented an increased output current density ...

Institute of Electrical and Electronics Engineers2016

Polarity control in WSe2 double-gate transistors

Giovanni De Micheli, Giovanni Vincenzo Resta, Pierre-Emmanuel Julien Marc Gaillardon

As scaling of conventional silicon-based electronics is reaching its ultimate limit, considerable effort has been devoted to find new materials and new device concepts that could ultimately outperform standard silicon transistors. In this perspective two-d ...

Nature Publishing Group2016

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Interface formation and chemical reactions on metal-GaTe(001) surfaces

Benchmarking machine-readable vectors of chemical reactions on computed activation barriers

p-GaN field plate for low leakage current in lateral GaN Schottky barrier diodes

Revisiting the concept of extents for chemical reaction systems using an enthalpy balance

Production of Additive‐Free Amorphous Nanoparticles with a SAW‐Based Microfluidic Spray‐Dryer

Design of Surface-Supported Bio-inspired Networks for CO2 and O2 Activation at Room Temperature

Doping-Free Complementary Logic Gates Enabled by Two-Dimensional Polarity-Controllable Transistors

MoS2/VO2 vdW heterojunction devices: Tunable rectifiers, photodiodes and field effect transistors

Mechanisms of the Antibacterial Effects of TiO2-FeOx under Solar or Visible Light: Schottky Barriers versus Surface Plasmon Resonance

Enhanced Electrical Performance and Heat Dissipation in AlGaN/GaN Schottky Barrier Diodes Using Hybrid Tri-anode Structure

Polarity control in WSe2 double-gate transistors

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Benchmarking machine-readable vectors of chemical reactions on computed activation barriers

Design of Surface-Supported Bio-inspired Networks for CO2 and O2 Activation at Room Temperature

p-GaN field plate for low leakage current in lateral GaN Schottky barrier diodes

Production of Additive‐Free Amorphous Nanoparticles with a SAW‐Based Microfluidic Spray‐Dryer

Revisiting the concept of extents for chemical reaction systems using an enthalpy balance

Doping-Free Complementary Logic Gates Enabled by Two-Dimensional Polarity-Controllable Transistors

Enhanced Electrical Performance and Heat Dissipation in AlGaN/GaN Schottky Barrier Diodes Using Hybrid Tri-anode Structure

Mechanisms of the Antibacterial Effects of TiO2-FeOx under Solar or Visible Light: Schottky Barriers versus Surface Plasmon Resonance

MoS2/VO2 vdW heterojunction devices: Tunable rectifiers, photodiodes and field effect transistors

Polarity control in WSe2 double-gate transistors