Au/GaAs(100) interface Schottky barrier modification by a silicon nitride intralayer
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In this thesis, angular resolved photoemission spectroscopy (ARPES) is used to study the electronic structure of different two-dimensional electron systems (2DES). This technique is very surface sensitive and the most direct method to probe the surface ban ...
Nanocomposite coatings composed of two phases with atomically sharp phase boundaries, show interesting mechanical properties. These properties are often originating from their high interface to volume ratio. Composites of nanocrystalline titanium nitride ( ...
In this thesis we study the electronic structure of different two-dimensional (2D) electron systems with angular resolved photoemission spectroscopy (ARPES). This technique is based on the photoelectric effect and directly probes the electronic structure o ...
Semiconductor nanowires are an emerging class of nanostructures that represent attractive building blocks for nanoscale electronic and photonic devices. To the present, nanowires are synthesized on a small scale by experimentally demanding gas phase deposi ...
In this thesis, the electronic structures of low-dimensional carbon allotropes have been studied. In particular, the spatially-resolved photocurrent responses of devices comprising carbon nanostructures were investigated through scanning photocurrent micro ...
During the past decade, graphene --- a monolayer of carbon atoms --- has attracted enormous interest for its use in nanoelectronic device applications. The absence of bandgap, however, has stalled its use both in logic (inability to turn off) and radio fre ...
We propose, fabricate, and experimentally demonstrate a circuit based on graphene field-effect transistors (GFETs) showing enhanced negative differential resistance (NDR) characteristics at room temperature. The proposed graphene NDR (GNDR) circuit consist ...
With transistors set to reach their smallest possible size in the next decade, the silicon chip is likely to change dramatically, or be replaced entirely. The transistor industry's path which has been largely shaped by Gordon Moore's famous prediction that ...
A 4H-SiC pressure sensor with piezoresistive transducers, for harsh environment applications, e.g., high temperature (~650°C) and/or in corrosive chemicals is presented. The sensing membrane, 1 mm in diameter and 50 µm in thickness, was formed by milling ( ...
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