Au/GaAs(100) interface Schottky barrier modification by a silicon nitride intralayer
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We present a photoemission spectroscopy study of As-rich n-GaAs(001) surface modified by the deposition of an undoped silicon overlayer with thickness quite narrowly covering the interval from similar to 4 to 25 Angstrom. We observed a nonmonotonic relatio ...
Titanium-containing amorphous hydrogenated carbon films (a-C:H/Ti) have been deposited by a medium-frequency-driven physical vapor deposition plasma-enhanced chemical-vapor deposition process at 40 kHz. Core-level photoelectron spectroscopy and valence-ban ...
Platinum silicide films are widely used in silicon devices for ohmic and Schottky contacts. It has been demonstrated in the recent years that Schottky barriers employing ultra-thin platinum silicide films (thickness < 10 nm) are useful for photodetection i ...
This work reports on the X-ray photoemission spectroscopy (XPS) measurements of the As-rich GaAs(001) surface properties developing due to the different thicknesses of the undoped silicon overlayers. We analyzed the bond nature on the silicon-GaAs interfac ...
We present the technology and performance of InAlN/AlN/GaN MOS HEMTs with gate insulation and surface passivation using ZrO2 or HfO2. About 10-nm-thick high-k dielectrics were deposited by MOCVD before the ohmic contact processing. Plasma pretreatment allo ...
We studied using x-ray photoelectron spectroscopy the deposition of Au, In, Ag and Al overlayers onto clean-cleaved GaTe(001) surfaces at room temperature. The first steps of the Schottky barrier formation on Au and In showed no interface reactions. Free T ...
The Schottky-barrier formation of the Au/GaP (110) interface has been investigated by photoemission, in the presence of large surface photovoltage effects induced by the intense photon beam of a synchrotron-radiation source. The surface photovoltage has be ...
We report on photocurrent and photoconductance processes in a freely suspended p-doped single GaAs nanowire. The nanowires are grown by molecular beam epitaxy, and they are electrically contacted by a focused ion beam deposition technique. The observed pho ...
Electrical transport studies on graphene have been focused mainly on the linear dispersion region around the Fermi level(1,2) and, in particular, on the effects associated with the quasiparticles in graphene behaving as relativistic particles known as Dira ...
We studied the deposition of Au, In, Ag, and Al overlayers onto clean-cleaved GaTe(001) surfaces at room temperature by x-ray photoelectron spectroscopy. Gold and In overlayers did not produce evidence of chemical reactions, and neither with cation nor ani ...