Fabrication of plasmonic structures with well-controlled nanometric features: a comparison between lift-off and ion beam etching

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FABRICATION AND ANALYSIS OF THIN FILM LITHUM NIOBATE RESONATORS FOR 5GHz FREQUENCY AND LARGE k(t)(2) APPLICATIONS

Luis Guillermo Villanueva Torrijo, Seniz Esra Küçük, Soumya Yandrapalli, Victor Plessky

This work presents the fabrication and analysis of suspended thin film Lithium Niobate resonators. The yield of the new fabrication process presented below is >90% showing devices with high k(t)(2) of 28% resonators at 5GHz, making them suitable for high f ...

IEEE2021

Nanopillars Enabling III-V Integration on Si (100) and (111)

Lucas Güniat

The majority of current semiconductor technologies are built on Si (100), such as the CMOS technology, or conventional solar cell devices. III-V semiconductors offer great perspectives given their high carrier mobility and direct band gap. However their in ...

EPFL2021

Development of microdevices for the in-plane thermoelectric characterization of deposited films

Stefano Mischler

Measuring the thermoelectric transport properties of a material is a prerequisite to determining its usefulness for application in waste heat recovery or cooling and the basis for devising improvement strategies. While well-established characterization met ...

ELSEVIER2021

Evaluation of secondary electron intensities for dopant profiling in ion implanted semiconductors: a correlative study combining SE, SIMS and ECV methods

Franz-Josef Haug, Aïcha Hessler-Wyser, Quentin Thomas Jeangros, Audrey Marie Isabelle Morisset, Philippe Wyss, Mario Joe Lehmann

This study evaluates the secondary electron (SE) dopant contrast in scanning electron microscopy (SEM) and helium ion microscopy (HIM) on boron implanted silicon sample. Complementary techniques like secondary ion mass spectrometry and electrochemical capa ...

IOP PUBLISHING LTD2021

Femtosecond laser-based optomechanical processes for permanent and high-precision fine alignment of optical systems

Saood Ibni Nazir

Miniaturization has been at the forefront of scientific research in the past decade covering diverse areas such as electronics, mechanics, and optics. While 'small is beautiful' may be a vast generalization, the true benefits of miniaturization are especia ...

EPFL2021

Electron Beam Induced Copper Deposition from Carboxylate Precursors and the Study of Underlying Growth Mechanisms

Luisa Berger

The fabrication of defined and high-quality metal nanostructures is an ongoing topic of research. Direct-write deposition of copper nanostructures is of great value for many fields of research and industrial applications. Focused electron beam induced depo ...

EPFL2020

Thermomechanical Nanocutting of 2D Materials

Jürgen Brugger, Giovanni Boero, Xia Liu, Ana Conde Rubio, Samuel Tobias Howell

Atomically thin materials, such as graphene and transition metal dichalcogenides, are promising candidates for future applications in micro/nanodevices and systems. For most applications, functional nanostructures have to be patterned by lithography. Devel ...

Wiley2020

Template-assisted electrodeposition of nickel and nickel copper 3D microcomponents

Patrik Schürch

New types of metamaterials and architectured material require metallic materials with precise structural design in the microscale. However, additivemanufacturing of metallic structures in themicroscale has proven difficult, as the demand for the material q ...

EPFL2020

Diffractive optical elements in single crystal diamond

Niels Quack, Marcell Kristof Kiss

We demonstrate the design, fabrication, and experimental characterization of near-field binary phase transmission diffractive optical elements (DOEs) in single crystal diamond. Top-hat and arbitrary pattern DOE beam shapers were numerically optimized using ...

OPTICAL SOC AMER2020

Grayscale e-beam lithography: Effects of a delayed development for well-controlled 3D patterning

Henning Paul-Julius Stahlberg

Grayscale electron beam lithography (g-EBL) is a fabrication technique that allows for tunable control of resist topography. In most cases, the height of the structures is in the submicron regime. Here, we present an extensive experimental characterization ...

2020

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Evaluation of secondary electron intensities for dopant profiling in ion implanted semiconductors: a correlative study combining SE, SIMS and ECV methods

Franz-Josef Haug, Aïcha Hessler-Wyser, Quentin Thomas Jeangros, Audrey Marie Isabelle Morisset, Philippe Wyss, Mario Joe Lehmann

IOP PUBLISHING LTD2021