High Efficient Interleaved Multi-channel dc/dc Converter Dedicated to Mobile Applications
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In the last decade the power consumption of electronic devices has increased for both static and active components. Following the Dennard's scaling rule, as long as the transistor sizes are reduced then the supply voltage (VDD) can also be scaled in order ...
Conventional device scaling has been the main guiding principle of the MOS device engineering over these past years. However, this aggressive scaling would be eventually limited due to the inability to remove the heat generated by MOSFET devices. The power ...
The semiconductor industry, governed by the Moore's law, has achieved the almost unbelievable feat of exponentially increasing performance while lowering the costs for years. The main enabler for this achievement has been the scaling of the CMOS transistor ...
In this paper, three different pseudo resistor (PR) realizations are compared regarding their noise and linearity performance within the DC feedback loop of an integrator-differentiator transimpedance amplifier (I-D-TIA). Thanks to its intrinsic shot noise ...
This thesis advances the field of high-voltage thin film transistors (HVTFTs) and dielectric elastomer actuators (DEAs) by demonstrating a strategy for low-voltage addressing of an array of high voltage soft actuators suspended on a flexible substrate.Fi ...
Utilization of the Integrated Gate Commutated Thyristor as a semiconductor switch in the Series Resonant Converter for isolated medium voltage DC-DC conversion offers an opportunity for high conversion efficiency while operating at the high switching frequ ...
In this work we present uni-directional GaN-on-Si MOSHEMTs with state-of-the-art reverse-blocking performance. We integrated tri-anode Schottky barrier diodes (SBDs) with slanted tri-gate field plates (FPs) as the drain electrode, and achieved a high rever ...
In this letter, we present high-performance GaN-on-Si metal-oxide-semiconductor high electron mobility transistors with record reverse-blocking (RB) capability. By replacing the conventional ohmic drain with a hybrid tri-anode Schottky drain, a high revers ...
Quasi two-level operation of voltage source converters, intended to operate either within high/medium voltage DC networks or low output frequency applications, has caught the attention of both academia and industry. Sequential insertion of the so-called su ...
Generalized State Space Average Modeling (GSSAM), of switching converters, offers an opportunity to improve fidelity of a model by inclusion of different harmonic components. Yet, the inclusion of each frequency component contributes to an increase in the ...