Publication

Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal phase transition in Vanadium dioxide

Related publications (30)

Magnetism of Single Surface Adsorbed Atoms Studied with Radio-Frequency STM

This thesis investigates the magnetic properties of single atoms and molecules adsorbed on thin magnesium oxide decoupling layers, grown on a silver single crystal. To address these systems experimentally, we use a low temperature scanning tunneling micros ...

EPFL2024

Enabling Wide Bandwidth in Substrate-Integrated Waveguide Slot Antennas by Using Low-Index Metamaterials

Romain Christophe Rémy Fleury, Amir Jafargholi, Jalaledin Tayebpour

This paper presents a solution to overcome the inherently limited bandwidth of substrate-integrated waveguide (SIW) slot antennas. It is analytically shown that by decreasing the permittivity of a dielectric loaded slot antenna, the resulting bandwidth inc ...

American Physical Society (APS)2024

Hybrid silicon photonics for terahertz applications

Ileana-Cristina Benea-Chelmus

This talk will highlight opportunities for terahertz science and technology from nonlinear integrated photonic circuits by exploring waveguides, resonators and terahertz antennas. Their present and future applications in metrology, emission and waveform co ...

Spie-Int Soc Optical Engineering2024

Multi-Frequency Tracking via Group-Sparse Optimal Transport

Isabel Haasler

In this letter, we introduce an optimal transport framework for inferring power distributions over both spatial location and temporal frequency. Recently, it has been shown that optimal transport is a powerful tool for estimating spatial spectra that chang ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Chip-Scale Watt-Range Terahertz Generation Based on Fast Transition in Nanoplasma Switches

Elison de Nazareth Matioli, Mohammad Rezaei

Despite recent advancements in photonics and electronics, there remains a lack of efficient, compact, high-power sources in the terahertz spectrum (0.3-10 THz). Recent research has revealed that nanoplasma (NP) switches can exhibit extremely fast transitio ...

Institute of Electrical and Electronics Engineers2024

A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs

Drazen Dujic

Dual-channel gate driver is commonly utilized in the industry for accommodating the widespread use of half-bridge power modules. As wide-bandgap devices become increasingly prevalent due to their superior switching characteristics compared with conventiona ...

2024

Lithium tantalate photonic integrated circuits for volume manufacturing

Tobias Kippenberg, Mikhail Churaev, Xinru Ji, Zihan Li, Alisa Davydova, Junyin Zhang, Yang Chen, Xi Wang, Kai Huang, Chen Yang

Electro-optical photonic integrated circuits (PICs) based on lithium niobate (LiNbO3) have demonstrated the vast capabilities of materials with a high Pockels coefficient1,2. They enable linear and high-speed modulators operating at complementary metal–oxi ...

2024

Terahertz emission from diamond nitrogen-vacancy centers

László Forró, Ferenc Simon, Bence Gábor Márkus, Sándor Kollarics

Coherent light sources emitting in the terahertz range are highly sought after for fundamental research and applications. Terahertz lasers rely on achieving population inversion. We demonstrate the generation of terahertz radiation using nitrogen-vacancy c ...

Amer Assoc Advancement Science2024

Silicon nitride electric-field poled microresonator modulator

Camille Sophie Brès, Anton Stroganov, Boris Zabelich, Christian André Clément Lafforgue, Edgars Nitiss

Stoichiometric silicon nitride is a highly regarded platform for its favorable attributes, such as low propagation loss and compatibility with complementary metal-oxide-semiconductor technology, making it a prominent choice for various linear and nonlinear ...

2024

Active Voltage Balancing with Seamless Integration into Dual Gate Driver for Series Connection of SiC MOSFETs

Drazen Dujic

The versatility of half-bridge configuration of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module contributes to its widespread adoption, highlighting the popularity and significance of its corresponding dual gat ...

2024