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Publications associées (149)

Exact Synthesis of Majority-Inverter Graphs and Its Applications

Giovanni De Micheli, Mathias Soeken, Pierre-Emmanuel Julien Marc Gaillardon, Luca Gaetano Amarù

We propose effective algorithms for exact synthesis of Boolean logic networks using satisfiability modulo theories (SMT) solvers. Since exact synthesis is a difficult problem, it can only be applied efficiently to very small functions, having up to 6 varia ...

Ieee-Inst Electrical Electronics Engineers Inc2017

Flexible Zinc-Tin Oxide Thin Film Transistors Operating at 1 kV for Integrated Switching of Dielectric Elastomer Actuators Arrays

Danick Briand, Herbert Shea, Samuel Rosset, Alexandre Poulin, Alexis Pierre Henri Marette, Nadine Besse

Flexible high-voltage thin- lm transistors (HVTFTs) operating at more than 1 kV are integrated with compliant dielectric elastomer actuators (DEA) to create a exible array of 16 independent actuators. To allow for high-voltage operation, the HVTFT implemen ...

Wiley-Blackwell2017

On current transients in MoS2 Field Effect Transistors

Andras Kis, Dmitry Ovchinnikov

We present an experimental investigation of slow transients in the gate and drain currents of MoS2-based transistors. We focus on the measurement of both the gate and drain currents and, from the comparative analysis of the current transients, we conclude ...

Nature Publishing Group2017

Characterization of bipolar transistors for cryogenic temperature sensors in standard CMOS, 2016 IEEE SENSORS

Edoardo Charbon, Harald Arjan Robert Homulle, Fabio Sebastiano

This paper presents the cryogenic characterization of the bipolar substrate PNPs that are typically employed as sensing elements in CMOS integrated temperature sensors. PNPs realized in a standard 160-nm CMOS technology were characterized over the temperat ...

2017

Static negative capacitance of a ferroelectric nano-domain nucleus

Nava Setter, Tomas Sluka, Pavel Mokry

Miniaturization of conventional field effect transistors (FETs) approaches the fundamental limits beyond which opening and closing the transistor channel require higher gate voltage swing and cause higher power dissipation and heating. This problem could b ...

Amer Inst Physics2017

Heuristic NPN classification for large functions using AIGs and LEXSAT

Giovanni De Micheli, Paolo Ienne, Mathias Soeken, Ana Petkovska

Two Boolean functions are NPN equivalent if one can be ob- tained from the other by negating inputs, permuting inputs, or negating the output. NPN equivalence is an equivalence relation and the number of equivalence classes is significantly smaller than th ...

Springer Int Publishing Ag2016

Underlap counterdoping as an efficient means to suppress lateral leakage in the electron–hole bilayer tunnel FET

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre, Pierpaolo Palestri

The electron-hole bilayer tunnel (EHBTFET). has been proposed as a density of states (DOS) switch capable of achieving a subthreshold slope lower than 60mV/decade at room temperature; however, one of the main challenges is the control of the lateral band-t ...

Institute of Physics2016

A Fault Tolerant Ripple-Carry Adder with Controllable-Polarity Transistors

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Jian Zhang, Hassan Ghasemzadeh Mohammadi

This paper deals with the effects of faults on circuits implemented with controllable-polarity transistors. We propose a new fault model that suits the characteristics of these devices, and report the results of a SPICE-based analysis of the effects of fau ...

2016

Method for speeding up boolean satisfiability

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Luca Gaetano Amarù

A method for transforming a tautology check of an original logic circuit into a contradiction check of the original logic circuit and vice versa comprises interpreting the original logic circuit in terms of AND, OR, MAJ, MIN, XOR, XNOR, INV original logic ...

2016

Oxygen Displacement in Cuprates under Ionic Liquid Field-Effect Gating

Davor Pavuna, Guy Joseph Günter Dubuis, Ivan Bozovic, Xi He

We studied structural changes in a 5 unit cell thick La1.96Sr0.04CuO4 film, epitaxially grown on a LaSrAlO4 substrate with a single unit cell buffer layer, when ultra-high electric fields were induced in the film by applying a gate voltage between the film ...

Nature Publishing Group2016

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