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Publications associées (176)

Que Sera Consensus: Simple Asynchronous Agreement with Private Coins and Threshold Logical Clocks

Bryan Alexander Ford, Philipp Svetolik Jovanovic

It is commonly held that asynchronous consensus is much more complex, difficult, and costly than partially-synchronous algorithms, especially without using common coins. This paper challenges that conventional wisdom with que sera consensus QSC, an approac ...

2020

Magnetic Skyrmions: From Fundamental Physics to Topological Electronics

Henrik Moodysson Rønnow, Dirk Grundler, Jonathan White

In Switzerland the National Science Foundation recently funded a network on Nano-Skyrmionics [https://skyrmions.epfl.ch] joining scientists from various institutions. Here, we provide a status report on selected forefront aspects of the research field. Thi ...

2020

Discrete Time Analysis of Phase Detector Timing Nonidealities in Type-I Sub-Sampling PLL

Yusuf Leblebici, Duygu Kostak

The analysis of the effect of sub-sampling phase detector (SSPD) timing nonidealities on Type-I sub-sampling phase-locked loop (SSPLL) is presented. The nonidealities considered are the delay between the complementary sampling clocks and the propagation de ...

IEEE2020

Physical Model of Low-Temperature to Cryogenic Threshold Voltage in MOSFETs

Christian Enz, Farzan Jazaeri, Arnout Lodewijk M Beckers

This article presents a physical model of the threshold voltage in MOSFETs valid down to 4.2 K. Interface traps close to the band edge modify the saturating temperature behavior of the threshold voltage observed in cryogenic measurements. Dopant freezeout, ...

2020

Intrinsic or nucleation-driven switching: An insight from nanoscopic analysis of negative capacitance Hf1-xZrxO2-based structures

Mihai Adrian Ionescu, Igor Stolichnov, Matteo Cavalieri, Carlotta Gastaldi

HfO2-based ferroelectrics have dramatically changed the application perspectives of polarization-switching materials for information processing and storage. Their CMOS compatibility and preservation of high reversible polarization down to a few nanometer t ...

AMER INST PHYSICS2020

Negative Resistance in Cascode Transistors

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera

Cascode topology which includes a high-voltage GaN and a low-voltage Si transistor is an attractive device concept, which uses the low ON-resistance of GaN while still being compatible with Si gate drivers. It demonstrates the highest threshold voltage amo ...

2020

Hot-Hole versus Hot-Electron Transport at Cu/GaN Heterojunction Interfaces

Giulia Tagliabue

Among all plasmonic metals, copper (Cu) has the greatest potential for realizing optoelectronic and photochemical hot-carrier devices, thanks to its CMOS compatibility and outstanding catalytic properties. Yet, relative to gold (Au) or silver (Ag), Cu has ...

AMER CHEMICAL SOC2020

Subthreshold Mismatch in Nanometer CMOS at Cryogenic Temperatures

Edoardo Charbon, Fabio Sebastiano

Cryogenic device models are essential for the reliable design of the cryo-CMOS electronic interface necessary to build future large-scale quantum computers. This paper reports the characterization of the drain-current mismatch of NMOS and PMOS devices fabr ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Intense microsecond electron pulses from a Schottky emitter

Marcel Drabbels, Ulrich Lorenz, Pavel Olshin, Gabriele Bongiovanni

Thanks to their high brightness, field emitters are the electron sources of choice in most high-end electron microscopes. Under typical operating conditions, the available emission current from these emitters is largely limited by practical considerations, ...

2020

RRAMSpec: A Design Space Exploration Framework for High Density Resistive RAM

Alexandre Sébastien Julien Levisse

Resistive RAM (RRAM) is a promising emerging Non-Volatile Memory candidate due to its scalability and CMOS compatibility, which enables the fabrication of high density RRAM crossbar arrays in Back-End-Of-Line CMOS processes. Fast and accurate architectural ...

2019

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