Christian Enz

Christian C. Enz (M84, S'12) received the M.S. and Ph.D. degrees in Electrical Engineering from the EPFL in 1984 and 1989 respectively. From 1984 to 1989 he was research assistant at the EPFL, working in the field of micro-power analog IC design. In 1989 he was one of the founders of Smart Silicon Systems S.A. (S3), where he developed several low-noise and low-power ICs, mainly for high energy physics applications. From 1992 to 1997, he was an Assistant Professor at EPFL, working in the field of low-power analog CMOS and BiCMOS IC design and device modeling. From 1997 to 1999, he was Principal Senior Engineer at Conexant (formerly Rockwell Semiconductor Systems), Newport Beach, CA, where he was responsible for the modeling and characterization of MOS transistors for the design of RF CMOS circuits. In 1999, he joined the Swiss Center for Electronics and Microtechnology (CSEM) where he launched and lead the RF and Analog IC Design group. In 2000, he was promoted Vice President, heading the Microelectronics Department, which became the Integrated and Wireless Systems Division in 2009. He joined the EPFL as full professor in 2013, where he is currently the director of the Institute of Microengineering (IMT) and head of the Integrated Circuits Laboratory (ICLAB).He is lecturing and supervising undergraduate and graduate students in the field of Analog and RF IC Design at EPFL. His technical interests and expertise are in the field of very low-power analog and RF IC design, semiconductor device modeling, and inexact and error tolerant circuits and systems.He has published more than 200 scientific papers and has contributed to numerous conference presentations and advanced engineering courses. Together with E. Vittoz and F. Krummenacher he is one of the developer of the EKV MOS transistor model and the author of the book "Charge-Based MOS Transistor Modeling - The EKV Model for Low-Power and RF IC Design" (Wiley, 2006). He has been member of several technical program committees, including the International Solid-State Circuits Conference (ISSCC) and European Solid-State Circuits Conference (ESSCIRC). He has served as a vice-chair for the 2000 International Symposium on Low Power Electronics and Design (ISLPED), exhibit chair for the 2000 International Symposium on Circuits and Systems (ISCAS) and chair of the technical program committee for the 2006 European Solid-State Circuits Conference (ESSCIRC). Since 2012 he has been elected as member of the IEEE Solid-State Circuits Society (SSCS) Administrative Commmittee (AdCom). He is also Chair of the IEEE SSCS Chapter of Switzerland.

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Domaines de recherche associés (123)

Publications associées (369)

Personnes menant des recherches similaires (9)

Transistor à effet de champ à grille métal-oxyde

thumb|right|235px|Photographie représentant deux MOSFET et une allumette Un transistor à effet de champ à grille isolée plus couramment nommé MOSFET (acronyme anglais de metal-oxide-semiconductor field-effect transistor — qui se traduit par transistor à effet de champ à structure métal-oxyde-semiconducteur), est un type de transistor à effet de champ. Comme tous les transistors, le MOSFET module le courant qui le traverse à l'aide d'un signal appliqué sur son électrode nommée grille.

Design

vignette|Chaise de Charles Rennie Mackintosh, 1897. Le design, le stylisme ou la stylique est une activité de création souvent à vocation industrielle ou commerciale, pouvant s’orienter vers les milieux sociaux, politiques, scientifiques et environnementaux. Le but premier du design est d’inventer, d’améliorer ou de faciliter l’usage ou le processus d’un élément ayant à interagir avec un produit ou un service matériel ou virtuel.

Réseau de capteurs sans fil

Un réseau de capteurs sans fil est un réseau ad hoc d'un grand nombre de nœuds, qui sont des micro-capteurs capables de recueillir et de transmettre des données d'une manière autonome. La position de ces nœuds n'est pas obligatoirement prédéterminée. Ils peuvent être aléatoirement répartis dans une zone géographique, intitulée « champ de captage » correspondant au terrain concerné pour le phénomène capté. En plus d'applications civiles, il existe des applications militaires aux réseaux de capteurs (détection d'intrusions, localisation de combattants, véhicules, armes, etc.

EE-594: Smart sensors for IoT

This lecture provides insights in the design and technologies of Internet-of-Things sensor nodes, with focus on low power technologies. The lectures alternate every two weeks between sensing technolog

MICRO-461: Low-power radio design for IoT

The basic function of an IoT node is to collect data and send it through a wireless channel to the cloud. Since the power consumption of an IoT node is largely dominated by the wireless communication,

EE-424: Fundamentals of analog & mixed signal VLSI design

This course provides the foundation for entry-level analog/mixed-signal IC designers. This course will layer advanced circuit design concepts (such as noise and distortion) over a broad range of conte

Third-harmonic generation monitoring of femtosecond-laser-induced in-volume functional modifications

Christian Enz, Yves Bellouard, Olivier Bernard, Assim Boukhayma, Andrea Kraxner

During the last two decades, ultrafast in-volume laser-based processing of transparent materials has emerged as a key 3D-printing method for manufacturing a variety of complex integrated photonic devi

2023

Comparison of Two in Pixel Source Follower Schemes for Deep Subelectron Noise CMOS Image Sensors

Christian Enz, Assim Boukhayma, Antonino Caizzone, Minhao Yang, Daniel Mathias Bold, Andrea Kraxner

This paper compares two in-pixel source follower stage designs for low noise CMOS image sensors embedded both on a same 5 mm by 5 mm chip fabricated in a 180 nm CIS process. The presented chip embeds

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

SEKV-E: Parameter Extractor of Simplified EKV I-V Model for Low-Power Analog Circuits

Christian Enz, Hung-Chi Han

This paper presents the open-source Python-based parameter extractor (SEKV-E) for the simplified EKV (sEKV) model, which enables the modern low-power circuit designs with the inversion coefficient des

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022