Orbitale atomique

Résumé

redresse=1.5|vignette|Représentation des nuages de probabilité de présence de l'électron (en haut) et des isosurfaces à 90 % (en bas) pour les orbitales 1s, 2s et 2p. Dans le cas des orbitales 2p ( ), les trois isosurfaces 2p, 2p et 2p représentées correspondent à , et . Les couleurs indiquent la phase de la fonction d'onde : positive en rouge, négative en bleu. En mécanique quantique, une orbitale atomique est une fonction mathématique qui décrit le comportement ondulatoire d'un électron ou d'une paire d'électrons dans un atome. Cette fonction donne la probabilité de présence d'un électron d'un atome dans une région donnée de cet atome. On la représente ainsi souvent à l'aide d'isosurfaces, qui délimitent la région à l'intérieur de laquelle la probabilité de présence de l'électron est supérieure à un seuil donné, par exemple 90 %. De telles régions ne sont pas nécessairement connexes et peuvent présenter des formes complexes issues des harmoniques sphériques. Chaque orbitale atomiq

Source officielle

https://fr.wikipedia.org/wiki/Orbitale_atomique

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Interface Investigations on Titanium Nitride Bilayer Systems

Dominik Anwar Jaeger

Nanocomposite coatings composed of two phases with atomically sharp phase boundaries, show interesting mechanical properties. These properties are often originating from their high interface to volume ratio. Composites of nanocrystalline titanium nitride (TiN) grains surrounded by a one to two monolayer thick interlayer of silicon nitride (Si3N4) show an enhanced nanohardness. The central theme of this thesis is concernedwith the interfacial properties of two-dimensional bilayer systems, which are used as model systems to describe the interfaces occurring in nanocomposite coatings. The systems under investigation are TiN interfaces in contact with silicon (Si), silicon nitride (Si3N4) and aluminum nitride (AlN). The primary tool used to analyze the interfaces of bilayer systems is X-ray Photoelectron Spectroscopy (XPS) with emphasis put on the shake-up feature of the Ti 2p photoelectron line. Shake-ups in TiN are observed as an additional peak on the lower binding energy side of the energy lines of the Ti 2p orbitals. Shake-ups are strongly influenced by valence electrons and electron density distributions. This makes them a powerful tool to probe the chemical and electronic structure of TiN interfaces. The aim of this study is to utilize the shake-up energy and its intensity to gain insight into interfacial structures and correlate their changes to interfacial polarization and macroscopic mechanical properties. Single crystalline (sc-) and oxygen-free TiN as well as oxygen-free bilayer systems were deposited by unbalanced magnetron sputtering and analyzed by Angle Resolved (AR-)XPS. Bilayer samples were deposited and their quality was controlled using X-ray diffraction (crystallinity), Rutherford back scattering (elemental composition), and atomic force microscopy (roughness). All XPS samples were fabricated, transfered and analyzed whilst maintaining ultra high vacuum. A precise and self-consistent XPS data processing method was developed to evaluate Ti 2p spectra. This method accounts for the correct photoelectron line shape, background subtraction and photoelectron peak area intensity. Binding energy, shake-up energy and intensity ratios of shake-ups taken frompristine TiN surfaces are precisely determined, and the influence of oxygen on the information content in peak positions and intensities was investigated. The shake-up energy and intensity of bulk sc-TiN and its origin of the shake-up are discussed. An analytical description for the XPS signal ratio of bilayer systems is derived to separate the interfacial signals from the bulk information. The results obtained by this analytical description are strongly influenced by the interface thickness that has been found to be proportional to the overlayer thickness. The revealed interface properties show a correlation between the shake-up intensity and the interface morphology, oxygen content, overlayer material and overlayer thickness. AR-XPS and X-ray Photoelectron Diffraction (XPD) results were used to interpret the crystalline structure of the different TiN/AlN and TiN/Si3N4 bilayer systems. AlN shows XPD patterns indicating a crystalline growth of AlN on sc-TiN. The electrically insulating AlN overlayer creates a charge accumulation at the TiN interface, which results in an enhanced shake-up intensity. XPD patterns of Si3N4 systems revealed a crystalline growth of Si3N4 in the first 0.6nm. The intensity of the diffraction patterns reduces with increasing Si3N4 overlayer thickness due to a change in the growth behavior from crystalline to amorphous structures. Si3N4 films show, in comparison to AlN, reduced interface charging and hence a lower shakeup intensity. The crystalline growth of Si3N4 in the initial stages is hindered in systems where a bias voltage is applied to the substrate during the deposition process. In contrast to the unbiased systems, which have crystalline interfacial structures, the biased systems no longer show XPD patterns due to a loss of crystallinity. Additionally the shake-up intensity of biased systems is thickness-independent, which is in contrast to unbiased systems. The difference in the shake-up intensity of biased and unbiased Si3N4 is explained by a different band gap of the Si3N4 structure in the first two monolayers. This thesis shows that the increase in the shake-up intensity is correlated to intrinsic and extrinsic interface charging. The obtained results, in combination with theoretical structure models from literature, show that in one to two monolayer thick interlayers a build-up of interface polarization is unlikely. The observed nanohardness enhancement in TiN/Si3N4 systems is explained with already known hardness effects.

EPFL2012

Chargement

Ab initio study of interface states at metal contacts to III-IV semiconductors

Thomas Maxisch

We present a theoretical study of the physical characteristics of metal/semiconductor junctions. Using first principle pseudopotential calculations, we have investigated the nature of electronic states with energies within the semiconductor band gap of representative abrupt, defect-free, anion-terminated metal/III-V interfaces. Namely, we focused on Al contacts to GaAs(001), AlAs(001) and cubic GaN(001) as well as on Al, Au and Cu junctions to cubic GaN(001). Recent advances in Schottky barrier concepts emphasize the possible relationship between interface states and the formation of the Schottky barrier. We aim at understanding the atomic-scale mechanisms responsible for interface states as well as their role in the Schottky barrier formation process. At As-terminated Al/GaAs(001) and Al/AlAs(001) junctions, resonant and localized interface states occur at the J point of the interface 2D Brillouin zone near the Fermi energy in the semiconductor midgap region. They correspond to intermetallic bonds between the outermost cation atoms of the semiconductor and the interfacial Al atoms of the metal. These interface states derive from an interaction between localized states of the Al(001) surface and semiconductor conduction band states, mediated by localized states of the unreconstructed, As-terminated semiconductor (001) surface. Our results indicate that interface states of the intermetallic, bonding-like kind could play an important role in the transport properties of metal/AlxGa1-xAs junctions. We have also investigated the electronic structure of Al, Au and Cu junctions to cubic, N-terminated GaN(001). The localized interface state reported for As-terminated Al/GaAs(001) and Al/AlAs(001) junctions occurs also at metal/GaN interfaces under the condition that atoms on the outermost atomic plane of the metal are placed in front of the outermost semiconductor cation. This indicates that the formation mechanism of this state is a very general one. In contrast to Al/AlxGa1-xAs junctions, these states occur at energy much larger than EF for the contacts to GaN. Thus, they are not expected to contribute significantly to the electronic transport of the latter interfaces. However, a large number of interface states attributed to d-type orbitals occur over a wide energy range including EF at contacts of noble metals to GaN.

EPFL2003

Chargement

Nanostructured materials can be defined as those materials whose structural elements - clusters, crystallites or molecules - have dimensions in the 1-100 nm range. The explosion in both academic and industrial interest over the past 20 years arises from the remarkable variations in fundamental electrical, optical and magnetic properties that occur as one progresses from an "infinitely extended" solid to a particle of material consisting of a countable number of atoms. In this work the attention was laid on the optical properties of Mn2+ doped ZnS nanoparticles with respect to a possible application as bio sensor in medical and biological analytics. A synthesis for this type of particles has been developed and the nanocrystals obtained have been investigated in terms of their composition, particle size and optical properties. The particles synthesized were stabilized with the amino acid L-cysteine and showed the typical ZnS:Mn emission spectrum with its orange emission due to the 4T1 –> 6A1 transition within the d-orbitals of the Mn2+ at 585 nm and its blue emission due to recombination over the ZnS band gap from shallow electron traps at 380 nm. The onset of the absorption was blue shifted from 340 nm (bulk) to 310 nm, indicating a quantum size effect. The particle sizes and particle size distributions were determined with methods such as transmission electron microscopy, photon correlation spectroscopy, analytical ultra centrifugation and field flow fractionation. The particle size has also been calculated from the shift in the band gap with the help of the effective mass approximation. The limits of the applied techniques are discussed and the particle size distribution determined to go from 3-20 nm with a first maximum at about 5 nm and a second maximum at about 17 nm. The particles' luminescence quantum yields have been determined between 1.5-2 %. They could be enhanced by a factor of three by coating the particles with a SiO2 shell. The quantum yields showed a strong dependence on the dispersion concentration and Mn2+ content. These effects have been investigated with quantum yield measurements at different temperatures and Mn2+ contents, and lifetime measurements. The lifetime measurements showed decay times in the ns region for the blue and in the μs-ms region for the orange emission, indicating a florescence mechanism for the ZnS and a phosphorescence mechanism for the Mn2+ radiation.

EPFL2004

Chargement

Ab initio study of interface states at metal contacts to III-IV semiconductors

Thomas Maxisch

EPFL2003

Interface Investigations on Titanium Nitride Bilayer Systems

Dominik Anwar Jaeger

EPFL2012

EPFL2004