Concept

History of the transistor

Publications associées (366)

Exciton-polariton integrated circuits

We show that logical signals encoded in bistable states in semiconductor microcavities can be generated and controlled electronically by exploiting the electrical sensitivity of Tamm-plasmon-exciton-polariton modes. The signals can be transported along pol ...

2010

Fluoroalkylphosphonic acid self-assembled monolayer gate dielectrics for threshold-voltage control in low-voltage organic thin-film transistors

Klaus Kern, Hagen Klauk, Frederik Sebastian Ante

An important prerequisite for the design of digital integrated circuits is the ability to control the threshold voltage of the individual transistors during manufacturing. To address the problem of controlling the threshold voltage of low-voltage organic t ...

2010

The Effect of Interface Modification on the Properties of Organic Thin-Film Transistors

Franziska Dora Fleischli

In organic thin-film transistors (OTFTs), the conducting channel is located near the interface between the organic semiconductor and the dielectric; this interface is crucial for transistor performance. The goal of this thesis is to study the effect of thi ...

EPFL2010

Global modeling strategy of parasitic coupled currents induced by minority-carrier propagation in semiconductor substrates

Maher Kayal, Jean-Michel Sallese, François Krummenacher, Marc Pastre, Fabrizio Lo Conte

This paper presents a modeling strategy to simulate the propagation of electrical perturbations induced by direct biasing of substrate junctions. Usually, this is done by identifying parasitic substrate devices such as bipolar transistors. However, mapping ...

2010

Metal-Ferroelectric-Metal-Oxide-Semiconductor Field Effect Transistor with Sub-60mV/decade Subthreshold Swing and Internal Voltage Amplification

Mihai Adrian Ionescu, Giovanni Antonio Salvatore, Alexandru Rusu

This work reports the first complete experimental demonstration and investigation of subthreshold swing, SS, smaller than 60 mV/decade, at room temperature, due to internal voltage amplification in FETs with a Metal-Ferroelectric-Metal-Oxide gate stack. Th ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2010

Silicon microcantilevers with MOSFET detection

Luis Guillermo Villanueva Torrijo

We report the fabrication of silicon microcantilevers with MOSFET detection, to be used in force measurements for biomolecular detection. Thin cantilevers are required for a high force sensitivity. Therefore the source and drain of the transistors have bee ...

2010

Organic thin film transistors on flexible polyimide substrates fabricated by full-wafer stencil lithography

Jürgen Brugger, Mihai Adrian Ionescu, Andreea Veronica Savu, Dimitrios Tsamados, Katrin Sidler Arnet, Nenad Cvetkovic

This paper presents new results on miniaturized pentacene thin film transistors (TFTs) fabricated on a spin coated polyimide (PI) film. Patterning steps, which are vital for the integrity and electrical performance of organic TFTs, were done using resistle ...

2010

Organic Thin Film Transistors on Flexible Polyimide Substrates Fabricated by Full Wafer Stencil Lithography

Jürgen Brugger, Mihai Adrian Ionescu, Andreea Veronica Savu, Dimitrios Tsamados, Katrin Sidler Arnet, Nenad Cvetkovic

This paper presents new results on miniaturized organic thin film transistors (TFT) fabricated on a spin coated polyimide (PI) film. Patterning steps, that are vital for the integrity and electrical performances of the organic TFT, were performed using res ...

Elsevier2010

Site-Specific Self-Assembled Liquid-Gated ZnO Nanowire Transistors for Sensing Applications

Klaus Kern, Kannan Balasubramanian, Vivek Pachauri

A scalable bottom-up solution-based approach for the site-specific realization of ZnO nanowire (ZnO-NW)-based field-effect transistors for sensing applications in liquids is reported. The nanowires are grown across pre-defined electrodes patterned by photo ...

2010

An experimental investigation of the surface potential in ferroelectric P(VDF-TrFE) FETs

Mihai Adrian Ionescu, Giovanni Antonio Salvatore, Alexandru Rusu

In this paper we report the fabrication and detailed electrical characterization of a ferroelectric transistor (Fe-FET) aiming at the extraction of its physical threshold voltage. The investigated transistors are fabricated on doped bulk silicon with a gat ...

2010

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