Concept
History of the transistor
Publications associées (366)
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The engineering of tin halide perovskites has led to the development of p-type transistors with field-effect mobilities of over 70 cm2 V-1 s-1. However, due to their background hole doping, these perovskites are not suitable for n-type transistors. Ambipol ...
Nature Portfolio2024Active Voltage Balancing with Seamless Integration into Dual Gate Driver for Series Connection of SiC MOSFETs
The versatility of half-bridge configuration of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module contributes to its widespread adoption, highlighting the popularity and significance of its corresponding dual gat ...
2024Unraveling the Electrochemical Electrode Coupling in Integrated Organic Electrochemical Transistors
Organic electrochemical transistors (OECTs) have gained enormous attention due to their potential for bioelectronics and neuromorphic computing. However, their implementation into real-world applications is still impeded by a lack of understanding of the c ...
WILEY-V C H VERLAG GMBH2023In Liquido Computation with Electrochemical Transistors and Mixed Conductors for Intelligent Bioelectronics
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Next-generation implantable computational devices require long-term-stable electronic components capable of operating in, and interacting with, electrolytic surroundings without being damaged. Organic electrochemical transistors (OECTs) emerged as fitting ...
WILEY-V C H VERLAG GMBH2023Electrical spectroscopy of defect states and their hybridization in monolayer MoS2
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Defects in solids are unavoidable and can create complex electronic states that can significantly influence the electrical and optical properties of semiconductors. With the rapid progress in the integration of 2D semiconductors in practical devices, it is ...
2023Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy
Anna Fontcuberta i Morral, Andrea Giunto, Thomas Hagger, Louise Emma Webb
GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...
AMER PHYSICAL SOC2023Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID
Jean-Michel Sallese, Adil Koukab, Gennaro Termo, Stefano Michelis
The discovery of a large fab-to-fab variability in the TID response of the CMOS technologies used in the design of ASICs for the particle detectors of the HL-LHC triggered a monitoring effort to verify the consistency of the CMOS production process over ti ...
IOP Publishing Ltd2023