Composé intermétallique | EPFL Graph Search

Un composé intermétallique, ou semi-métallique, est l'association de métaux ou de métalloïdes par une liaison chimique. Le composé est formé à une composition précise (composé stœchiométrique) ou dans un domaine de composition (composé non stœchiométrique) défini et distinct des domaines de solutions solides composés d'éléments purs. Il se forme également sous certaines conditions de pression et de température. La structure des intermétalliques est généralement ordonnée, en principe chaque élément occupe des sites particuliers ou possède au moins une préférence pour des sites particuliers. Il y a alternance périodique d'atomes. Les propriétés des intermétalliques (chimiques, physiques, mécaniques, cristallographiques) sont en discontinuité avec celles des éléments qui le constituent. C'est cette discontinuité des propriétés ainsi que la discontinuité de la composition qui marque la différence entre les alliages et les composés intermétalliques. Histoire Au début du , lors

Ab initio study of interface states at metal contacts to III-IV semiconductors

Thomas Maxisch

We present a theoretical study of the physical characteristics of metal/semiconductor junctions. Using first principle pseudopotential calculations, we have investigated the nature of electronic states with energies within the semiconductor band gap of representative abrupt, defect-free, anion-terminated metal/III-V interfaces. Namely, we focused on Al contacts to GaAs(001), AlAs(001) and cubic GaN(001) as well as on Al, Au and Cu junctions to cubic GaN(001). Recent advances in Schottky barrier concepts emphasize the possible relationship between interface states and the formation of the Schottky barrier. We aim at understanding the atomic-scale mechanisms responsible for interface states as well as their role in the Schottky barrier formation process. At As-terminated Al/GaAs(001) and Al/AlAs(001) junctions, resonant and localized interface states occur at the J point of the interface 2D Brillouin zone near the Fermi energy in the semiconductor midgap region. They correspond to intermetallic bonds between the outermost cation atoms of the semiconductor and the interfacial Al atoms of the metal. These interface states derive from an interaction between localized states of the Al(001) surface and semiconductor conduction band states, mediated by localized states of the unreconstructed, As-terminated semiconductor (001) surface. Our results indicate that interface states of the intermetallic, bonding-like kind could play an important role in the transport properties of metal/AlxGa1-xAs junctions. We have also investigated the electronic structure of Al, Au and Cu junctions to cubic, N-terminated GaN(001). The localized interface state reported for As-terminated Al/GaAs(001) and Al/AlAs(001) junctions occurs also at metal/GaN interfaces under the condition that atoms on the outermost atomic plane of the metal are placed in front of the outermost semiconductor cation. This indicates that the formation mechanism of this state is a very general one. In contrast to Al/AlxGa1-xAs junctions, these states occur at energy much larger than EF for the contacts to GaN. Thus, they are not expected to contribute significantly to the electronic transport of the latter interfaces. However, a large number of interface states attributed to d-type orbitals occur over a wide energy range including EF at contacts of noble metals to GaN.

EPFL2003

Interaction between liquid aluminium and solid iron Al-rich intermetallics formation

Guillaume Pasche

Intermetallic phases formation is one of the phenomena, which when coupled to thermal and mechanical strains leads to the premature wear of aluminium die casting tools made out of steel. This work focuses on two aspects of this wear problem. The first and major part investigates a simplified chemical system Fe(s)–Al(l) at 700 °C in order to study the formation of the intermetallic compounds. The second part focuses on the limitations of the tool wear by testing different coatings on the steel currently used for die casting. Experiments are performed on two sample types, differentiated by their interface orientation between the two initial phases (vertical and horizontal). Observation are also of two types. Post mortem observations are performed by light microscopy and both scanning and transmission electron microscopy. In situ observation are performed by X-ray tomography, that allows to follow the evolution of the intermetallic layer with time. In the Fe(s)–Al(l) system, one main phase, namely Fe2Al5 , forms with a particular morphology called tongue-like feature in the iron matrix. Tongue tips are generally single crystals. It is also observed that these exhibit a periodical contrast at the nanometre scale. This contrast is found to be due to a slight chemical variation within the existence domain of Fe2Al5. This splitting is linked to the spinodal decomposition of the phase observed at higher temperature. At the interface between tongues and the iron matrix, a layer of about hundred nanometres that surrounds the tongues is observed. It corresponds to the Æ2 FeAl phase. Iron matrix, due to the tongue growth, suffers a plastic deformation that is observed by recrystallisation of the direct tongue surrounding. The induced strain field also leads to porosity formation at the interface between the tongues and the matrix. Pores are then trapped in the Fe2Al5 phase and partially disappear near from the liquid interface. At this interface, a layer of the order of 10μm of Fe4Al13 is observed. The thickness of this layer is stable in the explored time range of 0-4 h. However, intermetallic blocks that detach from the layer are observed in the liquid. This is interpreted as mainly due to the dissolution of the formed layer in the bath to achieve its saturation in Fe. Intermetallic thicknesses and tongue density measurements as functions of time allow to highlight the presence of three main growth regimes. The first at the beginning of the contact corresponds to rapid emergence of the tongues in the matrix. The second is linked to their progressive slow down while they start to thicken. Both thickening and tip growth are in competition from the beginning of this regime. A third regime is however defined and corresponds to a more stable growth during which thickening and tip growth still act in parallel is but their effect is less visible as they vary with the square root of time. The tongue growth observed at the beginning of the reaction is explained by a growth front destabilisation, similarly to the destabilisation of a planar front that leads to dendritic solidification described by Mullins and Sekerka. A calculation based on their model is proposed and confirms the effect of the law aluminium diffusion in iron but is limited by assumptions made for its development. Technological investigation proceeds by modification of the studied system and comparison with the fundamental one. Two ferrous materials and one aluminium alloy are studied. In addition, different coatings deposited by electroless plating on one of the ferrous substrates are tested. A quality coefficient is proposed in order to compare the result of the contact between coating and liquid aluminium. One Co-based coating is revealed as the most promising material that allows to limit the wear of the ferrous part by liquid aluminium.

EPFL2013

Effect of Ca addition on interface formation in Al(Ca)/Al2O3 composites prepared by gas pressure assisted infiltration

Ludger Weber

The aim of the work is to study interface formation between Al2O3 particles and Al(Ca) matrix in dependence of Ca content. Aluminium matrix composites (AMC) subjected to investigation were prepared by gas pressure assisted infiltration of alumina beds with aluminium-calcium alloys. It is shown that alumina particles in the AMC are covered with a monocaldum aluminates layer whose coherence increases with increasing amounts of Ca in the aluminium-calcium alloys. Moreover, Al4Ca intermetallic phases are formed with increasing Ca content and interconnect alumina particles. XRD confirms the presence of both CaAl2O4 and CaAl4O2 ternary phases. However, HRTEM analysis confirmed CaAl2O4 with a rather complex structure containing a high density of stacking faults. It appeared that annealing at 735 degrees C does improve consistency of interface for Al 2 waCa/Al2O3 AMC, but do not affect the thickness of the interface in dependence on annealing time. (C) 2016 Elsevier Ltd. All rights reserved.

Elsevier Sci Ltd2016